2N7002（丝印12W）

N-Channel Channel Enhancement Mode MOSFET Features ● Surface-mounted package ● Extremely low threshold voltage ● Advanced trench cell design ● ESD protected ( HBM > 2KV ) Applications ● Portable appliances Quick reference ● BV ≧ 60 V Ptot ≦ 0.83 W ID ≦ 0.43 A ● RDS(ON) ≦ 3 Ω @ VGS = 10 V ● RDS(ON) ≦ 4 Ω @ VGS = 4.5 V Pin Description Pin Description 3 2 1 Simplified Outline 1 Gate(G) 2 Source(S) 3 Drain(D) Limiting Values Notes：* Surface Mounted on 1 in2 pad area, t ≤ 10 sec ** Pulse width ≤ 300 μs, duty cycle ≤ 2 % 1 of 6 Symbol Electrical Characteristics ( TA = 25 °C Unless Otherwise Noted ) Notes：a : Pulse test ; pulse width ≤ 300 μs, duty cycle ≤ 2 % b : Guaranteed by design, not subject to production testing 2 of 6 Typical Characteristics 3 of 6 4 of 6 5 of 6 Package Dimensions SOT-23 6 of 6