SK2306
N-Channel Enhancement Mode Power MOSFET
Description
The SK2306 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge .This device is suitable
for use as a load switch or in PWM applications.
D
General Features
● VDS = 30V,ID = 3.6A
G
RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON)
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免费人工找货- 国内价格
- 5+0.08977
- 20+0.08185
- 100+0.07393
- 500+0.06601
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- 国内价格
- 20+0.07488
- 200+0.05800
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- 3000+0.04258
- 9000+0.03769
- 21000+0.03506