SK2306
N-Channel Enhancement Mode Power MOSFET
Description
The SK2306 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge .This device is suitable
for use as a load switch or in PWM applications.
D
General Features
● VDS = 30V,ID = 3.6A
G
RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON)
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免费人工找货- 国内价格
- 1+0.18481
- 30+0.17821
- 100+0.17161
- 500+0.15841
- 1000+0.15181
- 2000+0.14785
- 国内价格
- 20+0.21639
- 200+0.17176
- 600+0.14704
- 3000+0.12775
- 9000+0.11481
- 21000+0.10794
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