N-Channel Enhancement Power Mosfet Specification
SOT-23
Features
·Advanced trench cell design
·High speed switch
3
Applications
·Portable appliances
·Notebook/PC appliances
·Power Management
·DC/DC Converter
2
1
Quick reference
·BV ≧ 60 V ID=3A
·RDS(ON) ≦ 90 mΩ @ VGS = 10 V
·RDS(ON) ≦ 110 mΩ @ VGS = 5 V
1：Gate
Gate 22：Source
1 of 2
3：Drain
Notes：
This wafer must be stored at N2 box ( RH
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