P-Channel
Channel Enhancement Mode MOSFET
Feature
●-30V/-3.8A,
RDS(ON) =55mΩ(MAX) @VGS = -10V.
10V.
RDS(ON) = 70mΩ(MAX) @VGS = -4.5V.
4.5V.
RDS(ON) =120mΩ(MAX) @VGS = -2.5V.
2.5V.
●Super
High dense cell design for extremely low RDS(ON)
●Reliable
and Rugged
●SOT-23
for Surface Mount Package
Applications
● Power
Management
●Portable
Equipment and Battery Powered Systems.
Absolute Maximum Ratings TA=25℃ Unless Otherwise noted
Electrical Characteristics TA=25℃ Unless Otherwise noted
1 of 2
Typical Characteristics
2 of 2
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