BAW56

Plastic- Encapsulate Diodes SWITCHING DIODE BAW56/BAV70/BAV99 FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance MARKING: SOT-23 BAW56:A1 BAV70:A4 MAXIMUM RATINGS (TA=25 BAV99:A7 unless otherwise noted) Parameter Symbol Reverse voltage Forward Current Limit V s 70 V RI 0 200 mA 0 500 0 0 225 0 2 556 5 5 150 6 5 -55-150 0 50 F IFM(surge) Peak Forward Surge Current P Power Dissipation RDθJ Thermal Resistance Junction to Ambient Air A T Junction temperature J TST Storage temperature range G ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Reverse Breakdown Voltage Unit Symbol VR mA mW /W unless otherwise specified) Min. Typ. Max. 70 Unit Conditions V IR=100μA VF1 0.715 V IF=1mA VF2 0.855 V IF=10mA VF3 1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 2.5 μA VR=70V Capacitance between terminals CT 1.5 pF VR=0,f=1MHz Reverse recovery time t rr 6 ns Forward voltage IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic- Encapsulate Diodes BAW56/BAV70/BAV99 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2