MMBT5551

Plastic-Encapsulate Transistors FEATURES MMBT5551 Complementary to MMBT5401 (NPN) Ideal for medium power amplification and switching MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 0.6 A Collector Power Dissipation PC 0.3 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-emitter breakdown voltage Emitter-base breakdown voltage 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Symbol Collector-base breakdown voltage 1. BASE Test conditions Min Typ Max Unit VCBO IC=100μA,IE=0 180 V VCEO IC= 1mA, IB=0 160 V VEBO IE= 10μA, IC=0 6 V Collector cut-off current ICBO VCB= 120V, IE=0 50 nA Emitter cut-off current IEB VEB= 4V, IC=0 50 nA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency O * hFE1 VCE=5V, IC=1mA 80 hFE2* VCE=5V, IC =10mA 100 hFE3* VCE=5V, IC=50mA 50 VCEsat* VBEsat* fT 300 IC=10mA, IB=1mA 0.15 IC=50mA, IB=5mA 0.2 IC=10mA, IB= 1mA 1 IC=50mA, IB= 5mA 1 VCE=10V,IC=10mA,f=100MHz 100 300 V V MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF Noise figure NF 8 dB VCE=5V,Ic=0.25mA, f=10Hz to 15.7KHz,Rs=1kΩ *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBT5551 Typical Characteristics Static Characteristic 18 70uA 12 DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=5V COMMON EMITTER Ta=25℃ 80uA 15 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 10 (V) COLLECTOR CURRENT IC VCEsat —— B 0.3 IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 200 100 200 IC 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C (pF) IC (mA) 100 100 (mA) β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=100℃ IB=20uA 3 0 COLLECTOR CURRENT IC hFE —— 500 90uA Ta=100℃ Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 Cib 10 Cob 1 0.1 1.0 VBE(V) Ta=25℃ 1 10 REVERSE VOLTAGE IC PC 0.4 150 —— V 20 (V) Ta Ta=25℃ COLLECTOR POWER DISSIPATION PC (W) TRANSITION FREQUENCY fT (MHz) VCE=10V 100 50 0.3 0.2 0.1 0.0 1 10 3 COLLECTOR CURRENT IC 20 (mA) GUANGDONG HOTTECH 30 0 25 50 75 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD 100 Ta 125 150 (℃ ) Page:P2-P2