2SA733

Plastic-Encapsulate Transistors FEATURES 2SA733 (PNP) Collector-Base Voltage Complement to 2SC945 MARKING: CS MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.15 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE 3. COLLECTO unless otherwise specified) Symbol Test conditions Collector-base breakdown voltage VCBO IC= -5uA,IE=0 Collector-emitter breakdown voltage VCEO IC= -1mA , Emitter-base breakdown voltage VEBO IE= -50uA, IC=0 Collector cut-off current ICBO VCB= -60 V , Emitter cut-off current IEBO VEB= -5 V , DC current gain hFE VCE= -6 V, IC= -1mA Collector-emitter saturation voltage SOT-23 2. EMITTER VCE(sat) IB=0 Min Typ Max Unit -60 V -50 V -5 V IE=0 IC=0 120 VBE(on) VCE=-6V,IC=-1.0mA -0.58 Transition frequency fT VCE=-6V,IC=-10mA 50 Collector output capacitance Cob VCB=-10V,IE=0,f=1MHZ Noise figure NF VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ uA -0.1 uA 475 IC= -100mA, IB=- 10mA Base-emitter voltage -0.1 -0.18 -0.3 V -0.62 -0.68 V MHz 4.5 7 pF 6 20 dB CLASSIFICATIONOF hFE Rank L H Range 120-220 220-475 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SA733 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2