2SC3356R

Plastic-Encapsulate Transistors 2SC3356 FEATURES z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz z High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz 1. BASE 2. EMITTER 3. COLLECTO APPLICATIONS z SOT-23 Designed for low noise amplifier at VHF,UHF and CATV band. MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -65~150 ℃ GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3 -P1 Plastic-Encapsulate Transistors Silicon Epitaxial Planar Transistor 2SC3356 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions Collector cut-off current ICBO VCB=10V,IE=0 1 μA Emitter cut-off current IEBO VEB=1V,IC=0 1 μA DC current gain hFE VCE=10V,IC=20mA Transition frequency fT VCE=10V, IC= 20mA 7 Insertion power gain |S21e|2 VCE=10V, IC= 20mA , f=1GHz 11.5 Feed-back capacitance Cre VCB=10V, IE=0,f=1MHz 0.55 1.0 pF Noise Figure NF VCE=10V,IC=7mA, f=1GHz 1.1 2.0 dB CLASSIFICATION Rank Range Marking OF MIN 50 TYP 120 MAX UNIT 300 GHz dB hFE Q R S 50-100 80-160 125-300 R23 R24 R25 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3 -P2 Plastic-Encapsulate Transistors Silicon Epitaxial Planar Transistor GUANGDONG HOTTECH INDUSTRIAL CO., LTD 2SC3356 Page:P3 -P3