Plastic-Encapsulate Mosfets
AO3401
P-Channel MOSFET
FEATURES
High dense cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability
D
1.Gate
2.Source
G
SOT-23
3.Drain
S
MARKING:A19T
Maximum ratings ( Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-4.2
A
Power Dissipation
PD
350
mW
Parameter
RθJA
357
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Thermal Resistance from Junction to Ambient (t
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- 20+0.22962
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- 6000+0.11750
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