Plastic-Encapsulate Mosfets
AO3401
P-Channel MOSFET
FEATURES
High dense cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability
D
1.Gate
2.Source
G
SOT-23
3.Drain
S
MARKING:A19T
Maximum ratings ( Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-4.2
A
Power Dissipation
PD
350
mW
Parameter
RθJA
357
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Thermal Resistance from Junction to Ambient (t
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免费人工找货- 国内价格
- 20+0.17392
- 200+0.13185
- 600+0.11307
- 3000+0.10456
- 9000+0.09891
- 21000+0.09522
- 国内价格
- 20+0.33270
- 100+0.19860
- 800+0.13900
- 3000+0.09920
- 6000+0.09430
- 30000+0.08740
- 国内价格
- 20+0.12471
- 200+0.11611
- 500+0.10750
- 1000+0.09890
- 3000+0.09460
- 6000+0.08858
- 国内价格
- 1+0.45870
- 200+0.15290
- 1500+0.09559
- 3000+0.07590
- 国内价格
- 20+0.17110
- 200+0.12960
- 600+0.11120
- 3000+0.10250
- 9000+0.09700
- 21000+0.09340
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