Plastic-Encapsulate Mosfets
AO3401
P-Channel MOSFET
FEATURES
High dense cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability
D
1.Gate
2.Source
G
SOT-23
3.Drain
S
MARKING:A19T
Maximum ratings ( Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
-4.2
A
Power Dissipation
PD
350
mW
Parameter
RθJA
357
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
Thermal Resistance from Junction to Ambient (t
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免费人工找货- 国内价格
- 10+0.26831
- 100+0.22162
- 300+0.19761
- 3000+0.18007
- 6000+0.17319
- 9000+0.16847
- 国内价格
- 10+0.25770
- 100+0.21270
- 300+0.18930
- 3000+0.17180
- 6000+0.16500
- 9000+0.16020
- 国内价格
- 20+0.24595
- 300+0.18114
- 1200+0.17842
- 3000+0.16506
- 15000+0.16341
- 国内价格
- 1+0.61270
- 200+0.20350
- 1500+0.12760
- 3000+0.10131
