MMBT2222A

Plastic-Encapsulate Transistors FEATURES MMBT2222A(NPN) Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 0.6 A Collector Power Dissipation PC 0.25 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 10μA, IE=0 75 V Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE=10μA, IC=0 6 V Collector cut-off current ICB VCB=60V, IE=0 0.01 μA Collector cut-off current O ICE VCE=30V,VBE(off)=3V 0.01 μA Emitter cut-off current X IEB VEB= 3V, IC=0 0.1 μA O hFE(1) VCE=10V, IC= 150mA 100 hFE(2) VCE=10V, IC= 0.1mA 40 hFE(3) 42 DC current gain 300 Transition frequency f VCE=10V, IC= 500mA IC=500 mA,IB= 50mA IC=150 mA, IB=15mA IC=500 mA,IB= 50mA IC=150 mA, IB=15mA VCE=20V, IC= 20mA, f=100MHz Delay time T td VCC=30V, VBE(off)=-0.5V 10 nS Rise time tr IC=150mA , IB1= 15mA 25 nS Storage time tS VCC=30V, IC=150mA 225 nS Fall time tf IB1=-IB2=15mA 60 nS Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage * VBE(sat) * GUANGDONG HOTTECH 1 0.3 2.0 1.2 300 INDUSTRIAL CO., LTD V V MHz Page:P2-P1 Plastic-Encapsulate Transistors MMBT2222ATypical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2