2N7002K

Plastic-Encapsulate Diodes FEATURE High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z z High saturation current capability z ESD Protected Up To 2k V 2N7002K N-Channel MOSFET MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V 1.Gate 2.Source Gate-Source Voltage VGS 20 V 3.Drain Continuous Drain Current ID 0.3 A Power Dissipation PD 0.225 W Thermal Resistance from Junction to Ambient RθJA 556 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Drain ℃ Gate Protection Diode Ta =25 ℃ unless otherwise specified Parameter Symbol SOT-23 Source EQUIVALENT CIRCUIT Test conditions Min Typ Max Unit V(BR)DSS VGS=0 V, ID=250 µA 60 Vth(GS) VDS=VGS, ID=250 µA 1 Gate-body Leakage lGSS VDS=0 V, VGS=±20 V ±80 nA Zero Gate Voltage Drain Current IDSS VDS=60 V, VGS=0 V 80 nA On-state Drain Current ID(ON) VGS=10 V, VDS=7 V Drain-Source On-Resistance RDS(on) Forward Trans conductance gfs Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-source on-voltage VDS(on) Diode Forward Voltage VSD Input Capacitance * Ciss Output Capacitance * Coss Reverse Transfer Capacitance * Crss 1.6 2.5 500 V mA VGS=10 V, ID=500mA 0.9 5 VGS=5 V, ID=50mA 1.1 7 Ω VDS=10 V, ID=200mA 80 VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V 1.2 V IS=115mA, VGS=0 V 0.55 ms 50 VDS=25V, VGS=0V, f=1MHz 25 pF 5 SWITCHING TIME Turn-on Time * td(on) Turn-off Time * td(off) VDD=25 V, RL=50Ω, 20 ns ID=500mA,VGEN=10 V RG=25Ω 40 *These parameters have no way to verify. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic- Encapsulate Diodes 2N7002K Transfer Characteristics Output Characteristics 1.0 1.4 Ta=25℃ VGS=10V,9V,8V,7V,6V Ta=25℃ VGS=5V Pulsed 1.2 Pulsed (A) ID 0.8 DRAIN CURRENT DRAIN CURRENT ID (A) 0.8 1.0 VGS=4V 0.6 0.4 0.6 0.4 0.2 VGS=3V 0.2 0.0 0 1 2 3 4 DRAIN TO SOURCE VOLTAGE RDS(ON) VDS 0.0 5 0 2 4 6 GATE TO SOURCE VOLTAGE (V) —— ID RDS(ON) 3 —— VGS (V) VGS 6 Ta=25℃ Ta=25℃ Pulsed RDS(ON) 2 ON-RESISTANCE ON-RESISTANCE RDS(ON) ( Ω) ( Ω) Pulsed VGS=5V 1 VGS=10V 0 0.0 0.2 0.4 0.6 DRAIN CURRENT 0.8 ID 1.0 4 ID=500mA 2 0 ID=50mA 0 6 GATE TO SOURCE VOLTAGE (A) 12 VGS 18 (V) IS —— VSD 2 Ta=25℃ SOURCE CURRENT IS (A) 1 Pulsed 0.3 0.1 0.03 0.01 3E-3 1E-3 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 1.4 VSD (V) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2