SI2301

Plastic-Encapsulate Mosfets SI2301 FEATURES P-Channel MOSFET High dense cell design for extremely low RDS(ON) Rugged and reliable Case Material: Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V 1.Gate 2.Source ID -2.3 A 3.Drain IDM -10 A PD 1.25 W Tj, Tstg -55 to +150 °C RθJA 100 °C/W Drain Current (Continuous) Drain Current (Pulsed) 1 SOT-23 D o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) 2 G Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol S Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS VGS = 0V, ID = -250µA IDSS VDS = -20V, VGS = 0V -1 µA -20 V Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA -1 V On Characteristics c VGS(th) Gate Threshold Voltage Static Drain-Source RDS(on) On-Resistance Forward Transconductance Dynamic Characteristics gFS Ciss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics Turn-Off Delay Time Turn-Off Fall Time VGS = -4.5V, ID = -2.8A 80 120 mΩ VGS = -2.5V, ID = -2.0A 110 150 mΩ VDS = -5V, ID = -2.8A 8 S VDS = -6V, VGS = 0V, f = 1.0 MHz 880 pF 270 pF Crss 175 pF d td(on) tr Turn-On Rise Time -0.45 d Input Capacitance Turn-On Delay Time VGS = VDS, ID = -250µA VDD = -6V, ID = -1A, VGS = -4.5V, RGEN = 6Ω 11 20 ns 5 10 ns td(off) 32 65 ns tf 23 45 ns GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3 -P1 Plastic-Encapsulate Mosfets Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd 11 VDS = -6V, ID = -2.8A, VGS = -4.5V 14.5 nC 1.5 nC 2.1 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current 3 IS Drain-Source Diode Forward Voltage 4 VSD VGS = 0V, IS = -0.75A -0.75 A -1.2 V 1.Repetitive Rating : Pulse width limited by maximum junction temperatu. 2.Surface Mounted on FR4 Board,t