S9012

Plastic-Encapsulate Transistors FEATURES S9012 (PNP) Complimentary to S9013 MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V 1. BASE Collector Current -Continuous IC -0.5 A 2. EMITTER Collector Power Dissipation PC 0.3 W 3. COLLECTO Junction Temperature TJ 150 Storage Temperature Tstg ELECTRICAL CHARACTERISTICS (Tamb=25 SOT-23 -55 to +150 unless otherwise specified) Parameter Symbol Collector-base breakdown voltage VCBO IC= -100uA, IE=0 -40 V Collector-emitter breakdown voltage VCEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage VEBO IE=-100uA, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 uA DC current gain hFE VCE=-1V, IC= -50mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V Transition frequency fT Cob Collector output capacitance CLASSIFICATION OF Test conditions VCE=-6V, IC= -20mA Min Typ Max 120 Unit 400 150 MHz f=30MHz VCB=-10V,IE=0,f=1MHz 5 pF hFE Rank L H J Range 120-200 200-350 300-400 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors S9012 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2