SI2300

Plastic-Encapsulate Mosfets FEATURES SI2300 Advanced Trench Process Technology N-Channel MOSFET High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 V 1.Gate 2.Source 3.Drain Drain Current (Continuous) Drain Current (Pulsed) 1 o ID 6 A IDM 18 A Total Power Dissipation @TA=25 C PD 1.25 W Maximum Diode Forward Current IS 1.6 A Tj, Tstg -55 to +150 °C RθJA 140 °C/W SOT-23 D Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) 2 G 1: Repetitive Rating: Pulse width limited by the maximum junction temperation. 2: 1-in2 2oz Cu PCB board S Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit • Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Body Leakage Current VGS=±8V, VDS=0V - - ±100 nA VDS=VGS, ID=250uA 0.6 0.8 1.2 V VGS=4.5V, ID=2.8A - 40 60 VGS=2.5V, ID=2A - 50 115 VDS=5V, ID=3.6A - 10 - S - 426 - PF - 79.5 - PF - 56 - PF •On Characteristics3 VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gFS Forward Transconductance •Dynamic Characteristics mΩ 4 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance GUANGDONG HOTTECH VDS=6V, VGS=0V, f=1MHz INDUSTRIAL CO., LTD Page:P3-P1 Plastic-Encapsulate Mosfets Electrical Characteristics (TA=25°C, unless otherwise noted) •Switching Characteristics4 Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(on) tr td(off) tf 3.73 - - 0.75 - Gate-Drain Charge - 1.04 - Turn-on Delay Time - 5.9 - VDD=6V, RL=6Ω, ID=1A, - 7.45 - VGEN=4.5V, RG=6Ω - 16 - - 3.96 - VDS=6V, ID=2.8A, VGS=4.5V Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time nC nS • Drain-Source Diode Characteristics VSD Drain-Source Diode Forward Voltage 3 : Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%. SI2300 Typical VGS=0V, IS=-1.6A - 1.2 V 4: Guaranteed by design, not subject to production testing Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P2 Plastic-Encapsulate Mosfets SI2300 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P3