BC807-40

Plastic-Encapsulate Transistors FEATURES BC807-16 (PNP) BC807-25 (PNP) BC807-40 (PNP) Ldeally suited for automatic insertion epitaxial planar die construction complementary NPN type available(BC817) Marking BC807-16 BC807-25 BC807-40 5A 5B MAXIMUM RATINGS (TA=25 5C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V IC -500 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Collector Current -Continuous Thermal Resistance Junction to Ambient RθJA ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE SOT-23 2. EMITTER 3. COLLECTO ℃/W 417 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCBO IC= -10μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -45 V Emitter-base breakdown voltage VEBO IE= -1μA, IC=0 -5 V Collector cut-off current ICBO VCB= -45V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -40V, IB=0 -0.2 uA Emitter cut-off current IEBO VEB= -4 V, -0.1 uA DC current gain IC=0 807-16 807-25 hFE VCE= -1V, IC= -100mA 807-40 100 250 160 400 250 600 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500mA, IB= -50mA -1.2 V Transition frequency fT VCE= -5V, IC= -10mA Cc IE = 0; VCB = -10 V f = 1 MHz 100 MHz f=100MHz collector capacitance GUANGDONG HOTTECH INDUSTRIAL CO., LTD 9 PF Page:P2-P1 Plastic-Encapsulate Transistors BC807-16 BC807-25 BC807-40 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2