MMBT5401

Plastic-Encapsulate Transistors FEATURES MMBT5401 (PNP) Complementary to MMBT5551 Ideal for medium power amplification and switching MARKING: 2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.6 A Collector Power Dissipation PC 0.3 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC= -100μA, IE=0 Collector-emitter breakdown voltage VCEO IC= -1mA, Emitter-base breakdown voltage VEBO IE= -10μA, IC=0 IB=0 Min Max Unit -160 V -150 V -5 V μA -0.1 μA ICB VCB=-120 V , Emitter cut-off current O IEB VEB=-4V , IC=0 O hFE1 VCE= -5V, IC= -1mA hFE2 VCE= -5V, IC=-10mA 100 hFE3 VCE= -5V, IC=-50mA 50 Collector-emitter saturation voltage VCE(sat) IC=-50 mA, IB= -5mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -1 V DC current gain Transition frequency fT -5mA VCE= -5V, IE=0 -0.1 Collector cut-off current IC= -10mA 80 100 300 MHz f=30MHz GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBT5401 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2