AO3400

Plastic-Encapsulate Mosfets AO3400 FEATURES N-Channel MOSFET The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high side switching. D 1.Gate 2.Source SOT-23 3.Drain G S Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 5.8 A Drain Current-Pulsed (note 1) IDM 30 A Power Dissipation PD 350 mW RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P1 Plastic-Encapsulate Mosfets AO3400 Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit Off Characteristics Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-source leakage current IGSS VGS =±12V, VDS = 0V 30 V 1 µA ±100 nA VGS =10V, ID =5.8A 35 mΩ VGS =4.5V, ID =5A 40 mΩ VGS =2.5V,ID=4A 52 mΩ On characteristics Drain-source on-resistance RDS(on) (note 3) Forward tranconductance gFS Gate threshold voltage Dynamic Characteristics VGS(th) VDS =VGS, ID =250µA 8 S 0.7 1.4 V 1050 pF (note 4,5) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Switching Characteristics VDS =5V, ID =5A VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 99 pF 77 pF 3.6 Ω 5 ns (note 4,5) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time td(on) tr VGS=10V,VDS=15V, 7 ns td(off) RL=2.7Ω,RGEN=3Ω 40 ns 6 ns 1 V tf Drain-source diode characteristics and maximum ratings Diode forward voltage (note 3) VSD IS=1A,VGS=0V Note : 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P2 Plastic-Encapsulate Mosfets AO3400 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4-P3 Plastic-Encapsulate Mosfets AO3400 Typical Characteristics 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 15 1.0 1ms 1s 10ms 10s DC 10 5 0.1s 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance Power (W) 10µs 100µs 10 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 0.1 20 20 TJ(Max)=150°C TA=25°C 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 ID (Amps) Crss D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance GUANGDONG HOTTECH INDUSTRIAL CO., LTD 100 1000 Page:P4-P4