RS1M

RS1A THRU RS1M FAST RECOVERY RECTIFIER DIODE FEATURES  Glass Passivated Die Construction  Low reverse leakage current  Low forward voltage drop  High current capability  Surface Mount device MECHANICAL DATA     Case: SMA(DO-214AC) Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.065 grams (approximate) MAXIMUM RATINGS AND CHARACTERISTICS(TA = 25°C unless otherwise noted) Parameter Symbol RS1A RS1B RS1D RS1G RS1J RS1K RS1M Unit Maximum Recurrent Peak Reverse Voltage DC Blocking Reverse Voltage RMS Reverse Voltage Maximum Average Forward Rectified Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Reverse Recovery Time (@IF=0.5A, IR=1.0A,IRR=0.25A) VRRM 50 100 200 400 600 800 1000 V VR 50 100 200 400 600 800 1000 V VR(RMS) 35 70 V 140 280 420 560 700 IF 1 A IFSM 30 A 250 150 trr 500 nS RθJA 50 °C/W Junction Temperature TJ -55 ~+150 °C Storage Temperature TSTG -55 ~+150 °C Thermal Resistance From Junction To Ambient ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 1.3 V IF=1A Reverse current IR 5 uA VR=VRRM Diode capacitance CD pF VR=4V,f=1MHz ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD 10 E-mail:hkt@heketai.com 1/4 RS1A THRU RS1M FAST RECOVERY RECTIFIER DIODE Typical Characteristics IF, INSTANTANEOUS FORWARD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 1.2 1.0 0.8 0.6 0.4 0.2 10 1.0 0.1 Tj = 25°C IF Pulse Width: 300µs 0.01 0 25 50 75 100 125 150 0 175 30 Single Half-Sine-Wave (JEDEC Method) Tj = 150°C 20 10 0 1 10 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (µA) IFSM, PEAK FORWARD SURGE CURRENT (A) TL , LEAD TEMPERATURE ( ° C) Fig. 1 Forward Current Derating Curve 0.4 1000 Tj = 125°C 100 10 0.1 0 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve Tj = 25°C 1.0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 2/4 RS1A THRU RS1M FAST RECOVERY RECTIFIER DIODE SMA Package Outline Dimensions Symbol Dimensions In Millimeters Min. Max. A 2.20 B Dimensions In Inches Max. 2.80 Min. 0.086 1.30 1.70 0.051 0.067 C 4.70 5.30 0.185 0.209 D 1.70 2.55 0.067 0.100 E 0.90 1.50 0.035 0.059 F 0.90 1.50 0.035 0.059 0.110 SMA Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 3/4 RS1A THRU RS1M FAST RECOVERY RECTIFIER DIODE SMA Tape and Reel SMA Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SMA 2.89 5.35 2.68 Ø1.50 1.75 5.50 4.00 4.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SMA Tape Leader and Trailer SMA Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 12.40 17.60 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 ©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD E-mail:hkt@heketai.com 4/4