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SI2302

SI2302

  • 厂商:

    HOTTECH(合科泰)

  • 封装:

    SOT-23

  • 描述:

    N沟道 漏源电压(Vdss):20V 连续漏极电流(Id):3A 功率(Pd):1W

  • 数据手册
  • 价格&库存
SI2302 数据手册
Plastic-Encapsulate Mosfets FEATURES SI2302 High dense cell design for extremely low RDS(ON) N-Channel MOSFET Rugged and reliable Case Material: Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-source Voltage VGS 8 V ID 2.1 A Drain Current (Continuous) 1.Gate 2.Source SOT-23 3.Drain Drain Current (Pulsed) a o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b IDM 10 A PD 0.4 W Tj, Tstg -55 to +150 °C RθJA 100 °C/W D G S Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit BVDSS VGS = 0V, ID = 10µA 20 IDSS VDS = 20V, VGS = 0V 1 µA Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current V Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA 1.2 V On Characteristics c VGS(th) Gate Threshold Voltage Static Drain-Source RDS(on) On-Resistance Forwand Transconductance gFS VGS = VDS, ID = 50µA 0.65 VGS = 4.5V, ID = 3.6A 55 72 mΩ VGS = 2.5V, ID = 3.1A 82 110 mΩ VDS = 5V, ID = 3.6A 8.5 S 237 pF 120 pF 45 pF Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time Turn-Off Delay Time Turn-On Fall Time d td(on) 23 45 ns 11 30 ns td(off) 34 70 ns tf 36 70 ns tr Turn-On Rise Time VDS = 10V, VGS = 0V, f = 1.0 MHz GUANGDONG HOTTECH VDD = 10V, ID = 3.6A, VGS = 4.5V, RGEN = 6Ω INDUSTRIAL CO., LTD Page:P3-P1 Plastic-Encapsulate Mosfets Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd 6 VDS = 10V, ID = 3.6A, VGS = 4.5V 10 nC 1.4 nC 1.8 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current c IS Drain-Source Diode Forward Voltage d VSD 0.94 A 1.2 V VGS = 0V, IS = 0.94A a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board,t
SI2302 价格&库存

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SI2302
  •  国内价格
  • 1+0.12917
  • 100+0.12056
  • 300+0.11194
  • 500+0.10333
  • 2000+0.09903
  • 5000+0.09644

库存:0