B772(1.5A)

Plastic-Encapsulate Transistors FEATURES B772(PNP) Power dissipation Marking : 772 MAXIMUM RATINGS (TA=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current -Continuous IC -1500 mA Collector Power Dissipation PC 500 mW Tstg -55-150 Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 1. BASE 2. COLLECTO SOT-89 3. EMITTER unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage VEBO IE= -100μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V fT Transition frequency 60 VCE= -5V, IC=-0.1A 400 80 MHz f =10MHz CLASSIFICATION OF HFE Rank R Range 60-120 GUANGDONG HOTTECH O 100-200 Y 160-320 INDUSTRIAL CO., LTD GR 200-400 Page:P2-P1 Plastic-Encapsulate Transistors B772 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2