SI2306

Plastic-Encapsulate Mosfets FEATURES SI2306 Lower on-resistance N-Channel MOSFET Reliable and Rugged Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-source Voltage VGS 20 V ID 3.16 A 1.Gate 2.Source 3.Drain Drain Current (Continuous) Drain Current (Pulsed) a o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) IDM 10 A PD 0.75 W Tj, Tstg -55 to +150 °C RθJA 100 °C/W D G Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol SOT-23 S Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DS VGS = 0V, ID =250µA 30 Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA 1.0 Gate-Body Leakage IGSS VDS =0V, VGS =±20V Zero Gate Voltage Drain Current IDSS VDS =30V, VGS =0V Drain-Source On-Resistancea RDS(on) 3.0 ±100 nA 0.5 µA VGS =10V, ID =3.5A 0.038 0.047 VGS =4.5V, ID =2.8A 0.052 0.065 Forward Transconductancea gfs VDS =4.5V, ID =2.5A 7.0 Diode Forward Voltage VSD IS=1.25A,VGS=0V 0.8 Gate Charge Qg VDS =15V,VGS =5V,ID =2.5A 3.0 Total Gate Charge Qgt Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss V Ω S 1.2 V Dynamic 6 VDS =15V,VGS =10V,ID =2.5A 4.5 9 1.6 nC 0.6 f =1.0MHz 2.5 5 7.5 Ω 305 VDS =15V,VGS =0V,f =1MHz pF 65 29 Switching Turn-On Delay Time Rise Time tr Turn-Off Delay Time Fall Time td(on) td(off) tf VDD=15V, RL=15Ω, ID ≈1A, VGEN=10V,Rg=6Ω 7 11 12 18 14 25 6 10 ns Notes : a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Mosfets SI2306 Typical Characteristics Output Characteristics Transfer Characteristics 14 20 VGS=7V VGS=6V VDS=3V 12 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 16 VGS=5V 12 VGS=4V 8 Ta=100℃ 10 8 Ta=25℃ 6 4 VGS=3V 4 2 0 0 0 1 2 3 DRAIN TO SOURCE VOLTAGE VDS 4 0.0 0.4 (V) 0.8 1.2 1.6 2.0 2.4 2.8 3.2 GATE TO SOURCE VOLTAGE 3.6 VGS 4.0 4.4 4.8 (V) RDS(ON) —— VGS RDS(ON) —— ID 80 400 Ta=25℃ Pulsed VGS=4.5V ON-RESISTANCE RDS(ON) (mΩ) ON-RESISTANCE RDS(ON) (mΩ) 70 60 50 40 VGS=10V 30 20 300 ID=2.5A 200 Ta=100℃ 100 Pulsed Ta=25℃ 10 Pulsed 0 0 0 1 2 3 4 5 6 DRAIN CURRENT IS —— ID 7 8 9 10 0 (A) 1 2 3 4 5 7 6 GATE TO SOURCE VOLTAGE VGS 8 9 10 (V) Threshold Voltage VSD 10 2.0 THRESHOLD VOLTAGE VTH (V) SOURCE CURRENT IS (A) 1.8 1 Ta=100℃ Ta=25℃ Pulsed Pulsed 1.6 ID=-250uA 1.4 1.2 1.0 0.8 0.1 0.0 0.4 0.8 1.2 SOURCE TO DRAIN VOLTAGE 1.6 2.0 VSD (V) GUANGDONG HOTTECH 0.6 25 50 75 JUNCTION TEMPERATURE INDUSTRIAL CO., LTD 100 Tj 125 (℃ ) Page:P2-P2