Plastic-Encapsulate Mosfets
2SK3018
FEATURES
N-Channel MOSFET
• Fast switching speed and low on-resistance.
• Easily designed drived circuits.
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
o
Total Power Dissipation @TA=25 C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
Symbol
Ratings
Unit
VDS
VGS
30
V
V
ID
100
mA
IDM
400
20
1.Gate
2.Source
SOT-23
3.Drain
Drain
PD
350
Tj, Tstg
-55 to +150
mA
mW
°C
RθJA
625
°C/W
Gate
∗ Gate
Protection
Diode
Source
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Symbol
Min.
Typ.
Max.
Unit
Conditions
IGSS
−
−
±2
µA
VGS = ±20V, VDS = 0V
V(BR)DSS
30
−
−
V
ID = 10µA, VGS = 0V
IDSS
−
−
1
µA
VDS = 30V, VGS = 0V
Gate threshold voltage
VGS(th)
0.8
−
1.5
V
VDS = 3V, ID = 100µA
Static drain-source on-state
resistance
RDS(on)
−
5
8
Ω
ID = 10mA, VGS = 4V
RDS(on)
−
7
13
Ω
ID = 1mA, VGS = 2.5V
Forward transfer admittance
G fs |
20
−
−
mS
VDS = 3V, ID = 10mA
Input capacitance
Ciss
−
13
−
pF
VDS = 5V
Output capacitance
Coss
−
9
−
pF
VGS = 0V
Reverse transfer capacitance
Crss
−
4
−
pF
f = 1MHz
Turn-on delay time
td(on)
−
15
−
ns
ID = 10mA, VDD
Zero gate voltage drain current
Rise time
Turn-off delay time
Fall time
tr
−
35
−
ns
VGS = 5V
td(off)
−
80
−
ns
RL = 500Ω
tf
−
80
−
ns
RG = 10Ω
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
5V
Page:P3-P1
Plastic-Encapsulate Mosfets
2SK3018
Typical Characteristics
0.15
200m
3V
3.5V
50m
0.1
2.5V
0.05
2V
1
2
20m
10m
5m
2m
Ta=125°C
75°C
25°C
−25°C
1m
0.5m
0.2m
VGS=1.5V
0
0
VDS=3V
Pulsed
100m
Ta=25°C
Pulsed
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
4V
3
4
0.1m
0
5
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
GATE THRESHOLD VOLTAGE : VGS(th) (V)
Fig.2 Typical transfer characteristics
VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25
0
25
50
75
100
VGS=4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
20
10
5
2
1
0.5
0.001 0.002
125 150
0.005
CHANNEL TEMPERATURE : Tch (°C)
10
5
2
1
0.5
0.001 0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.05
0.1
0.5
DRAIN CURRENT : ID (A)
Fig.5 Static drain-source on-state
resistance vs. drain current (ΙΙ)
GUANGDONG HOTTECH
15
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
20
0.02
0.2
0.5
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
VGS=2.5V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.01
DRAIN CURRENT : ID (A)
Fig.3 Gate threshold voltage vs.
channel temperature
50
4
GATE-SOURCE VOLTAGE : VGS (V)
Fig.1 Typical output characteristics
2
3
2
1
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0
5
10
15
20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
INDUSTRIAL CO., LTD
Page:P3-P2
Plastic-Encapsulate Mosfets
2SK3018
Typical Characteristics
0.5
VGS=4V
Pulsed
8
VDS=3V
Pulsed
0.2
7
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS(on) (Ω)
9
ID=100mA
6
ID=50mA
5
4
3
2
Ta=−25°C
25°C
75°C
125°C
0.1
0.05
0.02
0.01
0.005
0.002
1
0
−50 −25
0
25
50
75
100 125
0.001
0.0001 0.0002
150
0.0005 0.001 0.002
REVERSE DRAIN CURRENT : IDR (A)
REVERSE DRAIN CURRENT : IDR (A)
VGS=0V
Pulsed
100m
50m
20m
Ta=125°C
75°C
25°C
−25°C
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
0.5
1
200m
Ta=25°C
Pulsed
100m
50m
20m
10m
2m
1m
0.5m
0.2m
0
1000
1.5
Ciss
10
Coss
Crss
1
Ta=25°C
VDD=5V
VGS=5V
RG=10Ω
Pulsed
tf
500
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1
Fig.10 Reverse drain current vs.
source-drain voltage ( ΙΙ )
Ta=25°C
f=1MHZ
VGS=0V
2
0.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( Ι )
5
0V
VGS=4V
5m
SOURCE-DRAIN VOLTAGE : VSD (V)
20
0.5
0.1m
1.5
50
0.05 0.1 0.2
Fig.8 Forward transfer
admittance vs. drain current
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
200m
0.005 0.01 0.02
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE : Tch (°C)
td(off)
200
100
50
20
tr
td(on)
10
5
0.5
0.1
0.2
0.5
1
2
5
10
20
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
GUANGDONG HOTTECH
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
DRAIN CURRENT : ID (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
INDUSTRIAL CO., LTD
Page:P3-P3
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