2SK3018

Plastic-Encapsulate Mosfets 2SK3018 FEATURES N-Channel MOSFET • Fast switching speed and low on-resistance. • Easily designed drived circuits. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Drain-Source Voltage Gate-source Voltage Drain Current (Continuous) Drain Current (Pulsed) o Total Power Dissipation @TA=25 C Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) Symbol Ratings Unit VDS VGS 30 V V ID 100 mA IDM 400 20 1.Gate 2.Source SOT-23 3.Drain Drain PD 350 Tj, Tstg -55 to +150 mA mW °C RθJA 625 °C/W Gate ∗ Gate Protection Diode Source Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Gate-source leakage Drain-source breakdown voltage Symbol Min. Typ. Max. Unit Conditions IGSS − − ±2 µA VGS = ±20V, VDS = 0V V(BR)DSS 30 − − V ID = 10µA, VGS = 0V IDSS − − 1 µA VDS = 30V, VGS = 0V Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS = 3V, ID = 100µA Static drain-source on-state resistance RDS(on) − 5 8 Ω ID = 10mA, VGS = 4V RDS(on) − 7 13 Ω ID = 1mA, VGS = 2.5V Forward transfer admittance G fs | 20 − − mS VDS = 3V, ID = 10mA Input capacitance Ciss − 13 − pF VDS = 5V Output capacitance Coss − 9 − pF VGS = 0V Reverse transfer capacitance Crss − 4 − pF f = 1MHz Turn-on delay time td(on) − 15 − ns ID = 10mA, VDD Zero gate voltage drain current Rise time Turn-off delay time Fall time tr − 35 − ns VGS = 5V td(off) − 80 − ns RL = 500Ω tf − 80 − ns RG = 10Ω GUANGDONG HOTTECH INDUSTRIAL CO., LTD 5V Page:P3-P1 Plastic-Encapsulate Mosfets 2SK3018 Typical Characteristics 0.15 200m 3V 3.5V 50m 0.1 2.5V 0.05 2V 1 2 20m 10m 5m 2m Ta=125°C 75°C 25°C −25°C 1m 0.5m 0.2m VGS=1.5V 0 0 VDS=3V Pulsed 100m Ta=25°C Pulsed DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 4V 3 4 0.1m 0 5 50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) GATE THRESHOLD VOLTAGE : VGS(th) (V) Fig.2 Typical transfer characteristics VDS=3V ID=0.1mA Pulsed 1.5 1 0.5 0 −50 −25 0 25 50 75 100 VGS=4V Pulsed Ta=125°C 75°C 25°C −25°C 20 10 5 2 1 0.5 0.001 0.002 125 150 0.005 CHANNEL TEMPERATURE : Tch (°C) 10 5 2 1 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.05 0.1 0.5 DRAIN CURRENT : ID (A) Fig.5 Static drain-source on-state resistance vs. drain current (ΙΙ) GUANGDONG HOTTECH 15 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 20 0.02 0.2 0.5 Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) VGS=2.5V Pulsed Ta=125°C 75°C 25°C −25°C 0.01 DRAIN CURRENT : ID (A) Fig.3 Gate threshold voltage vs. channel temperature 50 4 GATE-SOURCE VOLTAGE : VGS (V) Fig.1 Typical output characteristics 2 3 2 1 DRAIN-SOURCE VOLTAGE : VDS (V) Ta=25°C Pulsed 10 5 ID=0.1A ID=0.05A 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static drain-source on-state resistance vs. gate-source voltage INDUSTRIAL CO., LTD Page:P3-P2 Plastic-Encapsulate Mosfets 2SK3018 Typical Characteristics 0.5 VGS=4V Pulsed 8 VDS=3V Pulsed 0.2 7 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 9 ID=100mA 6 ID=50mA 5 4 3 2 Ta=−25°C 25°C 75°C 125°C 0.1 0.05 0.02 0.01 0.005 0.002 1 0 −50 −25 0 25 50 75 100 125 0.001 0.0001 0.0002 150 0.0005 0.001 0.002 REVERSE DRAIN CURRENT : IDR (A) REVERSE DRAIN CURRENT : IDR (A) VGS=0V Pulsed 100m 50m 20m Ta=125°C 75°C 25°C −25°C 10m 5m 2m 1m 0.5m 0.2m 0.1m 0 0.5 1 200m Ta=25°C Pulsed 100m 50m 20m 10m 2m 1m 0.5m 0.2m 0 1000 1.5 Ciss 10 Coss Crss 1 Ta=25°C VDD=5V VGS=5V RG=10Ω Pulsed tf 500 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1 Fig.10 Reverse drain current vs. source-drain voltage ( ΙΙ ) Ta=25°C f=1MHZ VGS=0V 2 0.5 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.9 Reverse drain current vs. source-drain voltage ( Ι ) 5 0V VGS=4V 5m SOURCE-DRAIN VOLTAGE : VSD (V) 20 0.5 0.1m 1.5 50 0.05 0.1 0.2 Fig.8 Forward transfer admittance vs. drain current Fig.7 Static drain-source on-state resistance vs. channel temperature 200m 0.005 0.01 0.02 DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE : Tch (°C) td(off) 200 100 50 20 tr td(on) 10 5 0.5 0.1 0.2 0.5 1 2 5 10 20 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical capacitance vs. drain-source voltage GUANGDONG HOTTECH 50 2 0.1 0.2 0.5 1 2 5 10 20 50 100 DRAIN CURRENT : ID (mA) Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) INDUSTRIAL CO., LTD Page:P3-P3