8205A

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET 8205A Description The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V TSSOP-8 top view ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 Application D2 G2 G1 ●Battery protection ●Load switch S2 S1 ●Power management pin Assignment Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Schematic diagram Limit Unit 19.5 V ±10 V 6 A 25 A 1.5 W -55 To 150 ℃ 83 ℃/W Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ 19.5 21 Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA Zero Gate Voltage Drain Current IDSS VDS=19.5V,VGS=0V GUANGDONG HOTTECH INDUSTRIAL CO., LTD V 1 μA Page:P5 -P1 Plastic-Encapsulate Mosfets 8205A Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.7 1.2 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=4.5A 21 27 mΩ VGS=2.5V, ID=3.5A 27 37 mΩ VDS=5V,ID=4.5A 10 S 600 PF 330 PF 140 PF On Characteristics (Note 3) Forward Transconductance gFS 0.5 Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=8V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr td(off) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 10 20 nS VDD=10V,ID=1A 11 25 nS VGS=4.5V,RGEN=6Ω 35 70 nS 30 60 nS 10 15 nC VDS=10V,ID=6A, VGS=4.5V 2.3 nC 1.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=1.7A 0.75 1.2 V 1.7 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P5 -P2 Plastic-Encapsulate Mosfets 8205A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr td(off) Vout 90% VOUT G toff tf 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance(mΩ) Figure 3 Power Dissipation Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS GUANGDONG HOTTECH ID- Drain Current (A) Figure 6 Drain-Source On-Resistance INDUSTRIAL CO., LTD Page:P5 -P3 Plastic-Encapsulate Mosfets ID- Drain Current (A) Normalized On-Resistance 8205A TJ-Junction Temperature(℃) Vgs Gate-Source Voltage (V) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics Vgs Gate-Source Voltage (V) Vds Drain-Source Voltage (V) Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 9 Rdson vs Vgs Qg Gate Charge (nC) Figure 11 Gate Charge GUANGDONG HOTTECH Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward INDUSTRIAL CO., LTD Page:P5 -P4 Plastic-Encapsulate Mosfets ID- Drain Current (A) 8205A Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P5 -P5