SS14G

SS12G THRU SS120G Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 1.0A PINNING Features • Metal silicon junction, majority carrier conduction • For surface mounted applications • Low power loss, high efficiency • High forward surge current capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications PIN DESCRIPTION 1 Cathode 2 Anode 1 MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 70mg / 0.0025oz 2 Top View Marking Code: SS12 ~ SS120 Simplified outline SMA and symbol Absolute Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Symbols Parameter SS12G SS14 G SS16 G SS18G SS110 G SS112 G SS115 G SS120G Units Maximum Repetitive Peak Reverse Voltage V RRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage V RMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage V DC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current at Tc = 85 °C Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 1 A Maximum DC Reverse Current T a = 25°C at Rated DC Reverse Voltage T a =100°C Typical Junction Capacitance （1） Typical Thermal Resistance （2） Operating Junction Temperature Range Storage Temperature Range I F(AV) I FSM VF 40 0.55 30 0.70 0.85 A 0.90 V 0.1 2 mA 0.2 5 0.3 10 IR Cj A 1.0 110 80 pF RθJA 90 °C/W Tj -55 ~ +125 °C T stg -55 ~ +150 °C （1）Measured at 1MHz and applied reverse voltage of 4 V D.C. （2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas. 1 of 3 SS12G THRU SS120G Fig.2 Typical Reverse Characteristics Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve Average Forward Current (A) 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 10 4 T J =75°C 10 2 SS12G /SS14G 10 SS16G -SS120 G 1 T J =25°C 10 0 0 Case Temperature (°C) 60 80 100 Fig.4 Typical Junction Capacitance 500 Junction Capacitance ( pF) 20 10 1.0 SS12G /SS14G SS16 G /SS18 G SS110 G /SS112 G SS115G /SS120G 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 T J =25°C 200 100 50 SS12G /SS14G 20 SS16G -SS120 G 10 1.8 0.1 Transient Thermal Impedance（ °C /W） Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 60 50 SS12G /SS18G SS110G -SS120 G 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 1 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) T J =100°C 10 3 100 Number of Cycles at 60Hz Fig.6- Typical Transient Thermal Impedance 100 10 1 0.01 0.1 1 10 t, Pulse Duration（sec） 2 of 3 100 SS12G THRU SS120G PACKAGE OUTLINE Plastic surface mounted package; 2 leads A SMA c VM A HE g e E g A c D E e g HE max 2.2 0.31 4.7 2.9 1.7 1.5 5.4 min 1.9 0.12 4.2 2.3 1.2 0.8 4.7 UNIT mm e A D The recommended mounting pad size Marking Type number 2.2 (86) SS12G SS12 SS14G SS14 1.8 (71) 1.8 (71) 1.8 (71) Marking code mm Unit ： (mil) 3 of 3 SS16 G SS16 SS18G SS18 SS110 G SS110 SS112G SS112 SS115G SS115 SS120G SS120