RB521S-30
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
PINNING
for low current rectification and high speed
switching applications
DESCRIPTION
PIN
Features
• Extremely small surface mounting type
1
1
Cathode
2
Anode
C
2
Top View
Marking Code: "C"
Simplified outline SOD-523 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Mean Rectifying Current
IO
200
mA
IFSM
1
A
Tj
125
O
Tstg
- 40 to + 125
O
Symbol
Max.
Peak Forward Surge Current (60Hz for Cyc.)
Junction Temperature
Storage Temperature Range
C
C
Characteristics at Ta = 25 OC
Parameter
Unit
Forward Voltage
at IF = 200 mA
VF
0.5
Reverse Current
at VR = 10 V
IR
30
V
1 of 3
µA
RB521S-30
2 of 3
RB521S-30
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
∠
ALL ROUND
A
C
HE
D
UNIT
mm
bp
E
A
A
0.70
0.60
bp
0.4
0.3
C
D
0.135
0.100
1.25
1.15
3 of 3
E
0.85
0.75
HE
1.7
1.5
∠
V
0.1
5
O
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