LS4148

LS4148 Silicon Epitaxial Planar Switching Diode Fast switching diode in QuadroMELF case LS-34 especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148 QuadroMELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA IF 300 mA IFRM 500 mA IFSM 0.5 1 4 A Ptot 500 mW Tj 175 Tstg - 65 to + 175 Symbol Max. Unit RθJA 300 /W Average Rectified Forward Current Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs Power Dissipation Junction Temperature Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient Air 1) 1) Valid provided that electrodes are kept at ambient temperature. 1/3 ® Dated: 28/10/2022 Rev: 02 LS4148 Characteristics at Ta = 25 Parameter Reverse Breakdown Voltage at IR = 100 µA Forward Voltage at IF = 10 mA Reverse Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 Capacitance at VR = 0, f = 1 MHz Voltage Rise when Switching ON tested with 50mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Reverse Recovery Time at IF = 10 mA to IR = 1 mA, Irr = 0.1 x IR ,VR = 6 V, RL = 100 Ω Min. Max. Unit V(BR)R 100 - V VF - 1 V IR IR IR - 25 5 50 nA µA µA Ctot - 4 pF Vfr - 2.5 V trr - 4 ns ηv 0.45 - - Vo 2nF 5K ~ ~ ~ VRF =2V 60 Rectification Efficiency at f = 100 MHz, VRF = 2 V Symbol Rectification Efficiency Measurement Circuit 2/3 ® Dated: 28/10/2022 Rev: 02 LS4148 Electrical Characteristics Curve Fig 1. Power Derating Curve IF, Forward Current (mA) Fig 2. Forward Characteristic Curve VF, Forward voltage(V) Cj, Junction Capacitance (pF) Fig 4. Junction Capacitance 0 IR, Reverse Current (nA) Fig 3. Reverse Characteristic Curve Tj, Junction Temperature ( ) VR, Reverse Voltage(V) 3/3 ® Dated: 28/10/2022 Rev: 02