1N5819

1N5817 THRU 1N5819 SCHOTTKY BARRIER RECTIFIERS Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability • low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications H C Mechanical Data • Case: Molded plastic, DO-41 Dimensions in mm E T M E S Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Parameter Symbols 1N5817 Maximum Repetitive Peak Reverse Voltage VRRM 20 Maximum RMS voltage VRMS 14 Maximum DC Blocking Voltage VDC 20 Maximum Average Forward Rectified Current 0.375" (9.5 mm) Lead Length at TL = 90 OC I(AV) 1 A Peak Forward Surge Current, 8.3ms Single Half Sine-wave Superimposed On Rated Load (JEDEC method) at TL = 70 OC IFSM 25 A Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Forward Voltage at 3.1 A Maximum Instantaneous Reverse Current at Rated DC Reverse Voltage VF TA = 25 OC TA = 100 OC Typical Thermal Resistance IR 1N5819 Units 30 40 V 21 28 V 30 40 V 0.55 0.875 0.6 0.9 V 1 10 RθJL 50 15 CJ 110 Tj ,Tstg - 65 to + 125 RθJA Typical Junction Capacitance Storage and Operating Junction Temperature Range 0.45 0.75 1N5818 mA O C/W pF O C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 11/11/2008 1N5817 THRU 1N5819 AVERAGE FORWARD CURRENT AMPERES 1 RESISTIVE OR INDUCTIVE LOAD 0.375" (9.5mm) LEAD LENGTH 0.75 0.5 0.25 0 0 20 60 40 80 100 120 140 PEAK FORWARD SURGE CURRENT AMPERES Fig.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1-FORWARD CURRENT DERATING CURVE 30 TJ =TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 25 20 15 10 5 0 10 1 100 H C NUMBER OF CYCLES AT 60 Hz o LEAD TEMPERATURE, ( C) Fig.4- TYPICAL REVERSE CHARACTERISTICS Fig.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MILLIAMPERES INSTANTANEOUS FORWARD CURRENT AMPERES E T M E S 50 10 o Tj=125 C Pulse Width=300 S 1% Duty Cycle 1 o Tj=25 C 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 TJ =125 oC 1 0 0.01 0.001 0 TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE,pF o o Tj=25 C f=1.0MHz Vsig=50mVp-p 1 10 40 60 100 80 Fig.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 400 0.1 20 PERCENT OF RATED PEAK REVERSE VOLTAGE,% Fig.5- TYPICAL JUNCTION CAPACITANCE 10 o TJ =25 C INSTANTANEOUS FORWARD VOLTAGE VOLTS 100 o TJ =75 C 100 100 10 1 0.1 0.01 REVERSE VOLTAGE, VOLTS 0.1 1 10 100 t, PULSE DURATION,sec. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 11/11/2008