ACE60N03E

30V/60A N-Channel MOSFET General Description   Very low on-resistance RDS(on) @ VGS=4.5 V  Pb-free lead plating; RoHS compliant Part ID ACE60N03A Package Type Marking DFN3x3 60N03 ACE60N03A V DS 30 RDS(on),TYP@VGS=4.5 12 RDS(on),TYP@VGS=10V ID Tape and reel infomation V(RB)DSS IS 5000PCS/Reel ID IDM EAS PD VGS TSTG TJ Parameter Drain-Source breakdown voltage Diode continuous forward current Continuous drain current@VGS=10V Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient mΩ 60 A mΩ Rating Unit 60 A 30 CT =25° CT =100° V 60 A 80 A 40 CT =25° CT =25° A 450 mJ ±20 V 30 Storage and operating temperaturerange Thermal Characteristics 9 100% UIS Tested 100% Rg Tested Maximum ratings, at TC =25°C, unless otherwise specified Symbol V W -55 to 150 Typical 1.1 48 °C Unit °C/W °C/W ACE60N03A 30V/60A N-Channel MOSFET Thermal Characteristics Symbol Parameter Condition Min Typ Max Unit Zero Gate Voltage Drain Current(Tc=25℃) VGS=0V ID=250μA 30 - - V VDS=40V,VGS=0V -- -- 0.1 μA VDS=40V,VGS=0V -- -- 100 μA Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.8 2.5 V VGS=10V, ID=30A -- 9 12 mΩ VGS=4.5V, ID=20A -- 12 15 mΩ -- 1100 -- pF -- 130 -- 6.2 -- nC -- 14 -- nS -- nS Static Electrical Characteristics @ T j= 25°C (unless otherwise stated) V(BR)DSS IDSS IGSS VGS(TH) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=125℃) Drain-Source On-State Resistance ③ Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated) Ciss Input Capacitance CRSS Reverse Transfer Capacitance CDSS Qg Qgs Qds Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=30V,VGS=0V, f=1MHz VDS=20V,ID=20A, VGS=10V Switching Characteristics Td(on) Turn-on Delay Time Td(off) Turn-Off Delay Time tr tf Turn-on Rise Time Turn-Off Fall Time VDD=20V, ID=10A, RG=3.5Ω, VGS=10V Source- Drain Diode Characteristics@ T j= 25°C (unless otherwise stated) VSD Forward on voltage Qrr Reverse Recovery Charge trr NOTE: Reverse Recovery Time ISD=30A,VGS=0V Tj=25℃,Isd=20A, di/dt=500A/μs --- -- 180 -- pF 23 -- nC 9 -- -- -- 27 -- -- 19 -- -- 65 0.84 31 1.2 95 ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 43A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. pF nC nS nS V nS nC 30V/60A N-Channel MOSFET VDS, Drain -Source Voltage (V) VGS, Gate -Source Voltage (V) Fig2. VGS(TH) Gate -Source Voltage Vs. Tj Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) Fig3. Typical Transfer Characteristics ISD, Reverse Drain Current (A) Tj - Junction Temperature (°C) Normalized On Resistance ID, Drain-Source Source Current (A) Fig1. Typical Output Characteristics VGS(TH), Gate -Source Voltage (V) ID, Drain-Source Current (A) Typical Characteristics ACE60N03A VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage VDS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area 30V/60A N-Channel MOSFET ACE60N03A C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage ZqJC Normalized Transient Thermal Resistance) VDS , Drain-Source Voltage (V) Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9 . Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms Fig11. Switching Time Test Circuit and waveforms 30V/60A N-Channel MOSFET ACE60N03A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms