AC6N03B

AC6N03B 30V /5.7A Power MOSFET B N03B 6N03B N General Description 30V /5.7A Power MOSFET Very low on-resistance RDS(on) @ VGS=4.5 V Pb-free lead plating; RoHS compliant V DS 30 V RDS(on),TYP@VGS=10V RDS(on),TYP@VGS=4.5 ID 22.4 mΩ 35.2 mΩ 5.7 A Part ID Package Type Marking Tape and reel infomation AC6N03B SOT23-3 A09T 3000 Parameter 100% UIS Tested 100% Rg Tested Symbol Maximum Units Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 12 ±V 5.7 TA=25°C Continuous Drain Current A ID 4.7 TA=70°C Pulsed Drain Current B IDM 9.1 Avalanche Current G IAR 1.8 Repetitive avalanche energy L=0.1mH G EAR 4.2 mJ 1.4 TA=25°C Power Dissipation A PD W 0.9 TA=70°C Junction and Storage Temperature Range A -55 to 150 TJ, TSTG °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Symbol t ≤ 10s RJA Maximum Junction-to-Ambient A Steady State Maximum Junction-to-Lead C Steady State www.asiachip.cn 第 1 页，共 5 页 RJL Typ Max Units 80 120 °C/W 160 192 °C/W 48 76 °C/W Rev0：Oct 2018 AC6N03B 30V /5.7A Power MOSFET STATIC PARAMETERS Parameter Conditions BVDSS Drain-Source Breakdown Voltage ID = -250uA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V Symbol Min Typ Max Units 30 V 1 uA 5 IGSS Gate-Body leakage current VDS = 0V, VGS = ±20V VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A RDS(ON) Static Drain-Source OnResistance ±100 nA 1.1 1.5 V VGS=-10V, ID=5.7A 22.4 32.0 VGS=4.5V, ID=5.7A 35.2 45.8 0.7 mΩ gFS Forward Transconductance VDS=5V, ID=5.7A 81 VSD Diode Forward Voltage IS=1A,VGS=16V 0.72 1 V 5.7 A Typ Max Units 630 768 pF 75 92 pF 50 59 pF 0.9 Ω Max Units Maximum Body-Diode Continuous Current IS S DYNAMIC PARAMETERS Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Conditions Min VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Symbol Parameter Qg (10V) Total Gate Charge Qg 4.5V) Total Gate Charge Conditions Min Typ 6 3 VGS=10V, VDS=15V, ID=5.7A nC Qgs Gate Source Charge 1.26 Qgd Gate Drain Charge 1.8 tD(on) Turn-On DelayTime 4.25 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=500A/s 8.5 ns Qrr Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s 2.6 nC www.asiachip.cn VGS=10V, VDS=15V,RL=0.75Ω, RGEN=3Ω 3.4 11.9 ns 3.825 第 2 页，共 5 页 Rev0：Oct 2018 AC6N03B 30V /5.7A Power MOSFET www.asiachip.cn 第 3 页，共 5 页 Rev0：Oct 2018 AC6N03B 30V /5.7A Power MOSFET www.asiachip.cn 第 4 页，共 5 页 Rev0：Oct 2018 AC6N03B 30V /5.7A Power MOSFET www.asiachip.cn 第 5 页，共 5 页 Rev0：Oct 2018