2N5551

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Symbol 2N5550 2N5551 2N5550 2N5551 Emitter Base Voltage VCBO VCEO Value 160 180 140 160 Unit V V VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 16/08/2016 Rev: 01 2N5550 / 2N5551 Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA Collector Base Cutoff Current at VCB = 100 V at VCB = 120 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Symbol Min. Max. Unit 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 hFE hFE hFE hFE hFE hFE 60 80 60 80 20 30 250 250 - - 2N5550 2N5551 ICBO - 100 50 nA IEBO - 50 nA 2N5550 2N5551 V(BR)CBO 160 180 - V 2N5550 2N5551 V(BR)CEO 140 160 - V V(BR)EBO 6 - V 2N5550 2N5551 VCE(sat) - 0.15 0.25 0.2 V 2N5550 2N5551 VBE(sat) - 1 1.2 1 V fT 100 300 MHz Cob - 6 pF Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/08/2016 Rev: 01 2N5550 / 2N5551 SEMTECH ELECTRONICS LTD. ® Dated : 16/08/2016 Rev: 01