MMBT9013G

MMBT9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. As complementary types the PNP transistor MMBT9012 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 500 mA Power Dissipation Ptot 200 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 50 mA Current Gain Group G H at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Emitter Base Cutoff Current at VEB = 5 V Collector Bae Breakdown Voltage at IC = 100 μA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 100 μA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Voltage at VCE = 1 V, IC = 100 mA Gain Bandwidth Product at VCE = 6 V, IC = 20 mA C Symbol Min. Max. Unit hFE hFE hFE 100 160 40 250 400 - - ICBO - 100 nA IEBO - 100 nA V(BR)CBO 40 - V V(BR)CEO 30 - V V(BR)EBO 5 - V VCE(sat) - 0.6 V VBE(sat) - 1.2 V VBE - 1 V fT 100 - MHz SEMTECH ELECTRONICS LTD. ® C Dated : 16/03/2015 Rev:01 MMBT9013 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 TO-236 Package Outline Package Outline Dimensions (Units: mm) M E S E T H C SEMTECH ELECTRONICS LTD. ® Dated : 23/10/2010 Rev:01