MMBT8050C

MMBT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 350 mW Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 1 V, IC = 100 mA at VCE = 1 V, IC = 500 mA Collector Base Cutoff Current at VCB = 35 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 2 mA Emitter Base Breakdown Voltage at IE = 100 µA Collector Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at VCE = 5 V, IC = 10 mA C C Symbol Min. Typ. Max. Unit hFE hFE hFE 100 160 40 - 250 400 - - ICBO - - 100 nA V(BR)CBO 40 - - V V(BR)CEO 25 - - V V(BR)EBO 6 - - V VCE(sat) - - 0.5 V VBE(sat) - - 1.2 V fT - 100 - MHz MMBT8050C MMBT8050D SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01 MMBT8050 SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev:01