MMBT8050D(1.5A)

MMBT8050C / MMBT8050D (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary type the PNP transistor MMBT8550C and MMBT8550D (1.5A) is recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Emitter Voltage VCEO 25 V Collector Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6 V Peak Collector Current ICM 1.5 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBT8050C / MMBT8050D (1.5A) Characteristics at Ta=25 OC Symbol Min. Max. Unit MMBT8050C hFE 100 250 - MMBT8050D hFE 160 400 - hFE 40 - - ICBO - 100 nA IEBO - 100 nA VCE(sat) - 0.5 V VBE(sat) - 1.2 V V(BR)CEO 25 - V V(BR)CBO 40 - V V(BR)EBO 6 - V VBE - 1 V fT 120 - MHz DC Current Gain at VCE=1V, IC=100mA at VCE=1V, IC=800mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=6V Collector Saturation Voltage at IC=800mA, IB=80mA Base Saturation Voltage at IC=800mA, IB=80mA Collector Emitter Breakdown Voltage at IC=2mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Voltage at IE=100µA Base Emitter Voltage at IC=10mA, VCE=1V Transition frequency at VCE=10V, IC=50mA SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBT8050C / MMBT8050D (1.5A) Typical Characteristics DC Current Gain 0.5 0.4 I B =3.0mA I B =2.5mA 0.3 I B =2.0mA 0.2 I B =1.5mA I B =1.0mA 0.1 I B =0.5mA 0 0.4 0.8 1.2 1.6 2.0 h FE , DC CURRENT GAIN Ic(mA), COLLECTOR CURRENT Static Characteristic VCE=1V 100 10 1 0.1 VCE(V), COLLECTOR-EMITTR VOLTAGE Base -Emittr Saturation Voltage Collector-Emitter Saturation Voltage 10000 I C=10I B VBE(sat) 1000 100 VCE(sat) 10 0.1 1 10 100 1000 I C(mA), COLLECTOR CURRENT 1 10 100 1000 I C(mA), COLLECTOR CURRENT Base-Emitter On Voltage Ic(mA), COLLECTOR CURRENT VBE(sat) , VCE(sat)(mV), SATURATION VOLTAGE 1000 100 VCE=1V 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 VBE (V), BASE-EMITTER VOLTAGE f T(MHz), CURRENT GAIN BANDWIDTH PRODUCT Current Gain Bandwidth Product 1000 VCE=10V 100 10 1 1 10 100 400 I C(mA), COLLECTOR CURRENT SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005