MMBT3906

MMBT3906

  • 厂商:

    ST(先科)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 PNP 40V 200mA hFE=100~300 SOT23

  • 数据手册
  • 价格&库存
MMBT3906 数据手册
MMBT3906 PNP Silicon General Purpose Transistor for switching and amplifier applications. As complementary types the NPN transistors MMBT3904 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 200 mA Power Dissipation Ptot 350 mW Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev: 01 MMBT3906 Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 60 80 100 60 30 300 - - -ICBO - 50 nA -IEBO - 50 nA -V(BR)CBO 40 - V -V(BR)CEO 40 - V -V(BR)EBO 6 - V -VCE(sat) -VCE(sat) - 0.25 0.4 V V -VBE(sat) -VBE(sat) 0.65 - 0.85 0.95 V V fT 250 - MHz Cobo - 4.5 pF Delay Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA td - 35 ns Rise Time at -VCC = 3 V, -VBE = 0.5 V, -IC = 10 mA, -IB1 = 1 mA tr - 35 ns Storage Time at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA ts - 225 ns Fall Time at -VCC = 3 V, -IC = 10 mA, -IB1 = IB2 = 1 mA tf - 75 ns DC Current Gain at -VCE = 1 V, -IC = 0.1 mA at -VCE = 1 V, -IC = 1 mA at -VCE = 1 V, -IC = 10 mA at -VCE = 1 V, -IC = 50 mA at -VCE = 1 V, -IC = 100 mA Collector Base Cutoff Current at -VCB = 30 V Emitter Base Cutoff Current at -VEB = 6 V Collector Base Breakdown Voltage at -IC = 10 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Emitter Saturation Voltage at -IC = 10 mA, -IB =1 mA at -IC = 50 mA, -IB = 5 mA Base Emitter Saturation Voltage at -IC = 10 mA, -IB = 1 mA at -IC = 50 mA, -IB = 5 mA Current Gain Bandwidth Product at -VCE = 20 V, -IC = 10 mA, f = 100 MHz Output Capacitance at -VCB = 5 V, IE = 0, f = 1 MHz SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev: 01 MMBT3906 Power Dissipation vs Ambient Temperature Power Dissipation: Ptot (mW) 300 250 200 150 100 50 0 0 25 50 75 125 100 150 Ambient Temperature: Ta ( C) O SEMTECH ELECTRONICS LTD. ® Dated : 16/03/2015 Rev: 01
MMBT3906 价格&库存

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MMBT3906
  •  国内价格
  • 1+0.03630
  • 10+0.03330
  • 30+0.03270
  • 100+0.03090

库存:0

MMBT3906
  •  国内价格
  • 20+0.11560
  • 100+0.07160
  • 800+0.04740
  • 3000+0.03380
  • 6000+0.03210
  • 30000+0.02980

库存:71683

MMBT3906
  •  国内价格
  • 1+0.18150
  • 200+0.06028
  • 1500+0.03762
  • 3000+0.02992

库存:2520

MMBT3906
  •  国内价格
  • 50+0.04968
  • 500+0.04331
  • 3000+0.03564
  • 6000+0.03348
  • 24000+0.03165
  • 51000+0.03068

库存:24620