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MMBT5551

MMBT5551

  • 厂商:

    ST(先科)

  • 封装:

    SOT-23

  • 描述:

    通用三极管 NPN 160V 600mA hFE=80~250 SOT23

  • 数据手册
  • 价格&库存
MMBT5551 数据手册
MMBT5551-HAF NPN Silicon Epitaxial Planar Transistor Features • Low Collector Emitter Saturation Voltage • Halogen and Antimony Free(HAF), RoHS compliant 1.Base 2.Emitter 3.Collector TO-236 Plastic Package Applications • High voltage amplifier Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 180 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 350 mW Tj,Tstg - 55 to +150 Symbol Max. Unit RθJA 357 /W Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Thermal Resistance from Junction to Ambient 1) 1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 1/5 ® Dated: 10/11/2022 Rev: 05 MMBT5551-HAF Characteristics at Ta = 25 Parameter DC Current Gain at VCE = 5 V, IC = 1 mA at VCE = 5 V, IC = 10 mA at VCE = 5 V, IC = 50 mA Collector Base Cutoff Current at VCB = 120 V Emitter Base Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Gain Bandwidth Product at VCE = 10 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz 2/5 Symbol Min. Max. Unit hFE hFE hFE 80 80 30 250 - - ICBO - 50 nA IEBO - 50 nA V(BR)CBO 180 - V V(BR)CEO 160 - V V(BR)EBO 6 - V VCE(sat) - 0.15 0.2 V VBE(sat) - 1 1 V fT 100 300 MHz Cobo - 6 pF ® Dated: 10/11/2022 Rev: 05 MMBT5551-HAF Electrical Characteristics Curves Fig. 1 Output Characteristics Curve Fig. 2 Collector Current vs. Base to Emitter Voltage Fig. 4 VBESAT vs. Collector Current Fig. 3 DC Current Gain vs. Collector Current 3/5 ® Dated: 10/11/2022 Rev: 05 MMBT5551-HAF Electrical Characteristics Curves Fig. 6 Output Capacitance Fig. 5 VCESAT vs. Collector Current Fig. 7 Power Derating Curve 4/5 ® Dated: 10/11/2022 Rev: 05 MMBT5551-HAF Package Outline (Dimensions in mm) Unit mm A 1.20 0.89 A1 0.100 0.013 B 1.40 1.20 TO-236 C 0.19 0.08 Recommended Soldering Footprint D 3.04 2.80 E 2.6 2.2 F 1.02 0.89 G 2.04 1.78 L 0.51 0.37 L1 0.2 MIN 2.0 1.0 0.8 1.0 0.8 1.9 Packing information Pitch Reel Size Package Tape Width (mm) mm inch mm inch TO-236 8 4 ± 0.1 0.157 ± 0.004 178 7 Per Reel Packing Quantity 3,000 Marking information " G1 " = Part No. " • " = HAF (Halogen and Antimony Free) • G1 " YM " = Date Code Marking " Y " = Year " M " = Month Font type: Arial 5/5 ® Dated: 10/11/2022 Rev: 05
MMBT5551 价格&库存

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MMBT5551
    •  国内价格
    • 100+0.06798
    • 1000+0.04894
    • 2000+0.04760
    • 5000+0.04670

    库存:1208

    MMBT5551
    •  国内价格
    • 20+0.11860
    • 100+0.08870
    • 800+0.06880
    • 3000+0.04980
    • 15000+0.04490

    库存:241437

    MMBT5551
      •  国内价格
      • 50+0.08608
      • 500+0.06837
      • 3000+0.05854
      • 6000+0.05271
      • 24000+0.04752
      • 51000+0.04482

      库存:16956

      MMBT5551
      •  国内价格
      • 50+0.05771
      • 200+0.05408
      • 600+0.05045
      • 2000+0.04682
      • 5000+0.04319
      • 10000+0.04065

      库存:15391