BC847B

BC846…BC850 NPN Silicon Epitaxial Transistor for switching and amplifier applications As complementary types the PNP transistors BC856...BC860 is recommended. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VCBO VCBO VCBO VCEO VCEO VCEO VEBO VEBO 80 50 30 65 45 30 6 5 V V V V V V V V Collector Current IC 100 mA Peak Collector Current ICM 200 mA Power Dissipation Ptot 300 mW Tj 150 O Tstg - 65 to + 150 O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage BC846 BC847, BC850 BC848, BC849 BC846 BC847, BC850 BC848, BC849 BC846, BC847 BC848, BC849, BC850 Junction Temperature Storage Temperature Range C C SEMTECH ELECTRONICS LTD. ® Dated：27/04/2016 Rev：03 BC846…BC850 Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE 110 200 420 - 220 450 800 - ICBO - - 15 nA BC846 BC847, BC850 BC848, BC849 V(BR)CBO V(BR)CBO V(BR)CBO 80 50 30 - - V V V BC846 BC847, BC850 BC848, BC849 V(BR)CEO V(BR)CEO V(BR)CEO 65 45 30 - - V V V BC846, BC847 BC848,BC849,BC850 V(BR)EBO V(BR)EBO 6 5 - - V V VCEsat VCEsat - - 250 600 mV mV VBE(on) VBE(on) 580 - - 700 720 mV mV fT - 300 - MHz Output Capacitance at VCB = 10 V, f = 1 MHz Cob - - 6 pF Input Capacitance at VEB = 0.5 V, f = 1 MHz Cib - 9 - pF DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at VCB = 30 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 2 mA Collector Emitter Breakdown Voltage at IC = 100 µA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® Dated：27/04/2016 Rev：03 BC846…BC850 STATIC CHARACTERISTIC BASE-EMITTER ON VOLTAGE 100 I B =400 A I B =350 A 80 I B =300 A I B =250 A 60 I B =200 A I B =150 A 40 I B =100 A 20 I B =50 A I C(mA),COLLECTOR CURRENT I C(mA),COLLECTOR CURRENT 100 VCE=2V 10 1 0.1 0 0 4 8 12 16 0.2 0.4 0.6 0.8 1.0 1.2 20 VBE (V),BASE-EMITTER VOLTAGE VCE(V),COLLECTOR-EMITTER VOLTAGE 10000 h FE DC CURRENT GAIN VCE=5V 1000 100 10 1 10 100 1000 I C(mA),COLLECTOR CURRENT fT(MHz), CURRENT GAIN-BANDWIDTH PRODUCT CURRENT GAIN BANDWIDTH PRODUCT DC CURRENT GAIN VCE=5V 100 10 1 0.1 1 10 100 I C(mA),COLLECTOR CURRENT COLLECTOR OUTPUT CAPACITANCE 100 I C=10I B f=1MHz Cob(pF), CAPACITANCE VBE(sat) ,VCE(sat),(V) SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE 10000 1000 1000 VBE(sat) 100 10 1 VCE(sat) 10 0.1 1 10 100 1000 1 I C(mA),COLLECTOR CURRENT 10 100 1000 VCB(V),COLLECTOR-BASE VOLTAGE SEMTECH ELECTRONICS LTD. ® Dated：27/04/2016 Rev：03