MMBTSC3356S

MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base Voltage VEBO 3 V Collector Current IC 100 mA Power Dissipation Ptot 200 mW Tj 150 O TStg - 65 to + 150 O Junction Temperature Storage Temperature Range C C Characteristics (Ta = 25 OC) Symbol Min. Typ. Max. Unit hFE hFE hFE 50 80 125 - 100 160 250 - Collector Cutoff Current at VCB = 10 V ICBO - - 1 µA Emitter Cutoff Current at VEB = 1 V IEBO - - 1 µA Gain Bandwidth Product at VCE = 10 V, IC = 20 mA fT - 7 - GHz Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Cre - 0.55 1 pF Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz NF - 1.1 2 dB Parameter DC Current Gain at VCE = 10 V, IC = 20 mA 1) Current Gain Group Q R S 1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 04/10/2006 MMBTSC3356 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 04/10/2006