1N4148WS

1N4148WS Reverse Voltage 100 Volts Forward Current - 0.15 Ampere FAST SWITCHING DIODES Features SOD-323  Fast switching speed  Surface mount package ideally suited for automatic insertion 0.016(0.40) 0.057(1.45) 0.007(0.20) 0.043(1.10)  For general purpose switching applications  High conductance 0.008(0.20)max. Cathode bar 0.071(1.80) 0.063(1.40) 0.110 (2.80) 0.024 (0.60) 0.014 (0.35) Absolute Maximum Ratings at 25 °C 0.0019 (0.05) 0.006 (0.15) 0.0079 (0.20) 9° 0.016 (0.45) 0.008 (0.2 ) Case: JEDEC SOD-323 molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Weight : 0.0007 ounce, 0.02 grams Marking: T4 0° to 0.043 (1.10) Mechanical Data 0.032 (0.80) 0.098 (2.50) Dimensions in inches and (millimeters) SYMBOLS 1N4148WS VRRM 100 VRMS V V(BR)R 75 75 Forward continuous current IFM 300 mA Average rectified output current IO 150 0.5 1 4.0 mA PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Reverse Breakdown voltage at IR=1 μA Peak forward current at 1s at 1ms at 1us Power dissipation IFSM UNITS A 400 mW RΘJA 250 °C/W Junction temperature Tj -55 to +150 C Storage temperature TSTG -55 to +150 C Thermal resistance junction to ambient Pd Characteristics at Ta= 25 °C PARAMETER Forward voltage Reverse current Max. Unit Conditions VF1 0.715 V IF=1.0mA VF2 0.855 V IF=10mA VF3 1.0 V IF=50mA VF4 1.25 V IF=150mA IR1 0.025 SYMBOLS Min. Typ. uA a t VR= 2 0 V 1 uA a t VR= 7 5 V T j= 2 5 IR3 30 uA uA a t VR= 2 5 V T j= 1 5 0 °C a t VR= 7 5 V T j= 1 5 0 °C IR4 50 Capacitance between terminals CT 2 pF Reverse recovery time trr 4 ns http://www.microdiode.com T j= 2 5°C IR2 Rev:2025A5 °C VR=0V,f=1.0MHz IF=IR=10mA Irr=0.1XIR,RL=100 Page :1 1N4148WS Reverse Voltage 100 Volts Forward Current - 0.15 Ampere Typical Characterisitics Forward 200 Characteristics Reverse 1000 Characteristics 100 (nA) (mA) Ta=100℃ 0.1 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 Ta=25℃ 10 1 1.2 0 40 20 (V) REVERSE VOLTAGE Capacitance Characteristics 1.2 100 REVERSE CURRENT IR 1 T= a 2 5℃ FORWARD CURRENT IF T= a 1 00 ℃ 10 60 VR 80 (V) Power Derating Curve 600 Ta=25℃ PD (mW) 500 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 1.0 400 300 200 100 0.8 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) The curve above is for reference only. http://www.microdiode.com Rev:2025A5 Page :2 1N4148WS Reverse Voltage 100 Volts Forward Current - 0.15 Ampere Packing information P0 unit:mm P1 d Item E F B A W Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Symbol Tolerance A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 SOD-323 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-323 7" 3,000 4.0 45,000 190*190*190 178 400*400*220 180,000 APPROX. GROSS WEIGHT (kg) Suggested Pad Layout Symbol Unit (mm) Unit (inch) A 0.028 B 0.7 0.7 C 2.15 0.085 D 1.45 0.057 E 2.85 0.112 0.028 Important Notice and Disclaimer Microdiode Semiconductor(Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. Microdiode Semiconductor(Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Semiconductor(Shenzhen) assume any liability for application assistance or customer product design. Microdiode Semiconductor(Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Semiconductor(Shenzhen). Microdiode Semiconductor(Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Semiconductor(Shenzhen). http://www.microdiode.com Rev:2025A5 Page :3