1N4148W
Reverse Voltage 100 Volts
Forward Current - 0.15 Ampere
FAST SWITHING DIODES
Features
SOD-123
for automatic insertion
0.028(0.70)
0.071(1.80)
0.018(0.45)
0.055(1.40)
For general purpose switching applications
High conductance
0.008(0.20)max.
Cathode bar
Fast switching speed
Surface mount package ideally suited
0.110(2.80)
0.098(2.50)
0.154 (3.90)
Absolute Maximum Ratings at 25 °C
0.026 (0.65)
0.014 (0.35)
1N4148W
Units
Maximum Repetitive Peak Reverse Voltage
V RRM
100
V
Maximum RMS voltage
V RMS
75
V
Average rectified output current
IF(AV)
150
mA
0.5
at 1s
Non-reptitive Peak Forward Surge Current
at 1ms
I FSM
1
4
A
P tot
400
mW
RθJA
280
°C/W
T j , T stg
-55 ~ +150
°C
at 1us
Total Power Dissipation
Typical Thermal Resistance
(1)
Operating and Storage Temperature Range
0.0019 (0.05)
0.0087 (0.22)
9°
0.006 (0.15)
Dimensions in inches and (millimeters)
Symbols
Parameter
0.018 (0.45)
0.008 (0.2 )
Case: JEDEC SOD-123 molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Weight : 0.00056ounce, 0.016grams
Marking: T4
0° to
0.049 (1.25)
Mechanical Data
0.037(0.95)
0.138 (3.50)
(1)P.C.B. mounted with 5 X 5 mm copper pad areas.
Characteristics at Ta= 25 °C
Symbols
Parameter
1N4148W
Units
V (BR)R
75
V
VF
0.715
0.855
1.00
1.25
V
IR
0.025
1
30
50
uA
Typical Junction Capacitance
Cj
2
pF
Maximum Reverse Recovery Time
t rr
4
ns
Reverse BreakdownVoltage at I R=1μA
at 1m A
at 10 m A
at 50 m A
at 150mA
Maximum Forward Voltage
Peak Reverse Current
http://www.microdiode.com
at V R =20V T j =25°C
at V R =75V T j =25 °C
at VR=25V Tj=150 °C
at VR=75V Tj=150 °C
Rev:2025A7
Page :1
1N4148W
Reverse Voltage 100 Volts
Forward Current - 0.15 Ampere
Typical Characterisitics
Forward
300
Characteristics
(nA)
REVERSE CURRENT IR
10
T=
a 2
5℃
T=
a 1
00
℃
3
1
0.3
0.1
0.0
0.4
0.8
1.2
FORWARD VOLTAGE
VF
300
100
Ta=25℃
30
10
3
0
20
(V)
40
60
REVERSE VOLTAGE
Capacitance Characteristics
1.6
Ta=100℃
1000
1
1.6
Ta=25℃
f=1MHz
VR
100
(V)
400
PD
1.4
80
Power Derating Curve
500
(mW)
(mA)
30
IF
FORWARD CURRENT
Characteristics
3000
100
1.2
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Reverse
10000
1.0
0.8
0.6
0
4
8
12
REVERSE VOLTAGE
16
VR
(V)
20
300
200
100
0
0
25
50
75
100
AMBIENT TEMPERATURE
Ta
125
150
(℃)
The curve above is for reference only.
http://www.microdiode.com
Rev:2025A7
Page :2
1N4148W
Reverse Voltage 100 Volts
Forward Current - 0.15 Ampere
Packing information
unit:mm
P0
P1
d
Item
Symbol
Tolerance
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.05
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
SOD-123
E
F
B
A
W
P
D2
T
D1
C
W1
D
Carrier width
Carrier length
Carrier depth
Sprocket hole
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
2.1
4.0
1.60
1.55
178.00
50.0
13.00
1.75
3.50
4.00
4.00
2.00
0.25
8.15
10.5
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
Reel packing
PACKAGE
REEL SIZE
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
CARTON
SIZE
(m/m)
CARTON
(pcs)
SOD-123
7"
3,000
4.0
45,000
190*190*190
178
400*400*220
180,000
APPROX.
GROSS WEIGHT
(kg)
9.0
Suggested Pad Layout
Symbol
A
Unit (mm)
Unit (inch)
0.047
B
1.2
1.2
C
3.2
0.126
D
2.0
0.079
E
4.4
0.173
0.047
Important Notice and Disclaimer
Microdiode Semiconductor(Shenzhen) reserves the right to make changes to this document and its products and specifications at
any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,
purchase or use.
Microdiode Semiconductor(Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for
any particular purpose, not does Microdiode Semiconductor(Shenzhen) assume any liability for application assistance or
customer product design. Microdiode Semiconductor(Shenzhen) does not warrant or accept any liability with products which are
purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Microdiode Semiconductor(Shenzhen).
Microdiode Semiconductor(Shenzhen) products are not authorized for use as critical components in life support devices or
systems without express written approval of Microdiode Semiconductor(Shenzhen).
http://www.microdiode.com
Rev:2025A7
Page :3
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