DSF1D E1D

DSF1D E1D

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMF(SOD-123FL)

  • 描述:

    快恢复二极管 VRRM=200V If=1A VF=950mV CJ=10pF trr=35ns SOD123FL

  • 详情介绍
  • 数据手册
  • 价格&库存
DSF1D E1D 数据手册
DSF1A THRU DSF1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SUPER FAST RECTIFIER Features SOD-123FL  Glass passivated device  Ideal for surface mouted applications  Low reverse leakage  Metallurgically bonded construction 0.079(2.00) 0.063(1.60) 0.046 (1.20) 0.031 (0.80) 0.118(3.00) 0.098(2.50)  High temperature soldering guaranteed: 250°C/10 seconds,0.375”(9.5mm) lead length, 0.052(1.35) 0.035(0.90) 5 lbs. (2.3kg) tension 0.012(0.30) 0.002(0.05) 0.039(1.00) 0.012(0.30) Mechanical Data 0.158(4.00) 0.134(3.45) Case: JEDEC 6OD-123FL molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.0053 ounce, 0.015grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) DSF1A DSF1B DSF1C DSF1D DSF1E DSF1G DSF1J E1A E1B E1C E1D E1E E1G E1J 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 SYMBOLS VRRM VRMS VDC UNITS V V V I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 30 A Maximum instantaneous forward voltage at 1.0A VF Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 5 100 CJ trr 15 35 pF Typical thermal resistance (NOTE 3) RJA 85 ℃/W Operating junction temperature range TJ -55 to +150 -55 to +150 ℃ Typical junction capacitance (NOTE 1) Maximum Reverse Recovery Time (NOTE 2) Storage temperature range TSTG 1 1.25 1.68 V μA ns ℃ Note: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.PCB mounted on 2.0*2.0" (5.0*5.0cm) coppeer pad area. http://www.microdiode.com Rev:2025A3 Page :1 DSF1A THRU DSF1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Typical Characterisitics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram t rr 10 ohm Noninductive 50 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 40 20 0 Case Temperature (°C) T J =25°C 1.0 DSF1A~DSF1D DSF1E/DSF1G 0.1 100 Fig.5 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 10 80 60 % of PIV.VOLTS DSF1J 0.01 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 m mss Si S i n g l e Ha H a l f Si S i n e Wa Wa v e ( J E D E C Me Method) 00 10 1 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2025A3 Page :2 DSF1A THRU DSF1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SOD-123FL A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 E F B A Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width W P D2 T D1 C W1 D 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-123FL 7" 3,000 4.0 45,000 190*190*190 178 400*400*220 180,000 Suggested Pad Layout Symbol Unit (mm) Unit (inch) A 1.2 0.047 B 1.2 3.2 0.126 D 2 0.079 E 4.4 0.173 C 0.047 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A3 Page :3
DSF1D E1D
物料型号:DSF1A 至 DSF1J

器件简介: - 表面安装超快速整流器 - 反向电压:50至600伏特 - 正向电流:1.0安培 - 封装类型:SOD-123FL

引脚分配: - 极性:色带表示阴极端 - 引脚:镀层轴向引线,可按MIL-STD-750方法2026焊接

参数特性: - 最大重复峰值反向电压(VRRM):600伏特 - 最大RMS电压(VRMS):420伏特 - 最大直流阻断电压(VDC):600伏特 - 最大平均正向整流电流(I(AV)):1.0安培 - 峰值正向浪涌电流(IFSM):8.3毫秒单半正弦波叠加在额定负载上(JEDEC方法) - 最大瞬时正向电压(VF):在1.0A时 - 最大直流反向电流(IR):在额定直流阻断电压下,TA=25°C - 最大反向恢复时间(trr):典型值 - 典型结电容(CJ):在1MHz和4.0V直流反向电压下测量 - 工作和存储温度范围:-55至+150°C - 典型热阻(RθJA):在0.20.2英寸(5.05.0mm)铜垫面积上安装PCB时

功能详解: - 玻璃钝化器件,适用于表面安装应用 - 冶金键合结构 - 高温焊接保证:250°C/10秒,0.375英寸(9.5mm)引线长度,5磅(2.3kg)张力

应用信息: - 适用于单相半波60Hz,电阻性或感性负载 - 对于电容性负载,电流需降低20%

封装信息: - 封装类型:JEDEC SOD-123FL模塑塑料体覆盖钝化芯片 - 封装尺寸:1.8±0.1 x 2.8±0.1 x 0.10-0.30毫米 - 重量:0.0007盎司,0.02克
DSF1D E1D 价格&库存

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DSF1D E1D
  •  国内价格
  • 50+0.06489
  • 600+0.05270
  • 1200+0.05191
  • 3000+0.04087

库存:1509