0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
DSF1G E1G

DSF1G E1G

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMF(SOD-123FL)

  • 描述:

    VR=400V IF=1A 10pF Trr=35ns

  • 数据手册
  • 价格&库存
DSF1G E1G 数据手册
DSF1A THRU DSF1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere SURFACE MOUNT SUPER FAST RECTIFIER Features SOD-123FL  Glass passivated device  Ideal for surface mouted applications  Low reverse leakage  Metallurgically bonded construction 0.079(2.00) 0.063(1.60) 0.046 (1.20) 0.031 (0.80) 0.118(3.00) 0.098(2.50)  High temperature soldering guaranteed: 250°C/10 seconds,0.375”(9.5mm) lead length, 0.052(1.35) 0.035(0.90) 5 lbs. (2.3kg) tension 0.012(0.30) 0.002(0.05) 0.039(1.00) 0.012(0.30) Mechanical Data 0.158(4.00) 0.134(3.45) Case: JEDEC 6OD-123FL molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.0053 ounce, 0.015grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) DSF1A DSF1B DSF1C DSF1D DSF1E DSF1G DSF1J E1A E1B E1C E1D E1E E1G E1J 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 SYMBOLS VRRM VRMS VDC UNITS V V V I(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM 30 A Maximum instantaneous forward voltage at 1.0A VF Maximum DC reverse current TA=25℃ at rated DCblocking voltage TA=125℃ IR 5 100 CJ trr 15 35 pF Typical thermal resistance (NOTE 3) RJA 85 ℃/W Operating junction temperature range TJ -55 to +150 -55 to +150 ℃ Typical junction capacitance (NOTE 1) Maximum Reverse Recovery Time (NOTE 2) Storage temperature range TSTG 1 1.25 1.68 V μA ns ℃ Note: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A. 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.PCB mounted on 2.0*2.0" (5.0*5.0cm) coppeer pad area. http://www.microdiode.com Rev:2025A3 Page :1 DSF1A THRU DSF1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Typical Characterisitics Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram t rr 10 ohm Noninductive 50 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note:1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 40 20 0 Case Temperature (°C) T J =25°C 1.0 DSF1A~DSF1D DSF1E/DSF1G 0.1 100 Fig.5 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 10 80 60 % of PIV.VOLTS DSF1J 0.01 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.001 0 0.5 1.0 1.5 2.0 2.5 Instaneous Forward Voltage (V) 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surage Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surage Current 35 30 25 20 15 10 05 8.3 m mss Si S i n g l e Ha H a l f Si S i n e Wa Wa v e ( J E D E C Me Method) 00 10 1 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2025A3 Page :2 DSF1A THRU DSF1J Reverse Voltage - 50 to 600 Volts Forward Current - 1.0 Ampere Packing information unit:mm P0 P1 d Item Symbol Tolerance SOD-123FL A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.1 4.0 1.60 1.55 178.00 50.0 13.00 1.75 3.50 4.00 4.00 2.00 E F B A Carrier width Carrier length Carrier depth Sprocket hole 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width W P D2 T D1 C W1 D 0.25 8.15 10.5 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE REEL SIZE REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) CARTON SIZE (m/m) CARTON (pcs) SOD-123FL 7" 3,000 4.0 45,000 190*190*190 178 400*400*220 180,000 Suggested Pad Layout Symbol Unit (mm) Unit (inch) A 1.2 0.047 B 1.2 3.2 0.126 D 2 0.079 E 4.4 0.173 C 0.047 Important Notice and Disclaimer Microdiode Electronics (Shenzhen) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Shenzhen) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Shenzhen) assume any liability for application assistance or customer product design. Microdiode Electronics (Shenzhen) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Shenzhen). Microdiode Electronics (Shenzhen) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Shenzhen). http://www.microdiode.com Rev:2025A3 Page :3
DSF1G E1G 价格&库存

很抱歉,暂时无法提供与“DSF1G E1G”相匹配的价格&库存,您可以联系我们找货

免费人工找货