ES1DF-SMAF

ES1DF-SMAF

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    SMAF

  • 描述:

    VR=200V IF=1A 15pF Trr=35ns

  • 详情介绍
  • 数据手册
  • 价格&库存
ES1DF-SMAF 数据手册
ES1AF THRU ES1JF SURFACE MOUNT SUPER FAST RECTIFIER Reverse Voltage - 50 to 600 Volts SMAF FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Super fast switching for high efficiency Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds at terminals Glass passivated chip junction Cathode Band Top View 0.106(2.70) 0.094(2.40) 0.063(1.60) 0.051(1.30) 0.146(3.7) 0.130(3.3) 0.0091(0.23) 0.0071(0.18) 0.051(1.30) 0.043(1.10) Forward Current - 1.0 Ampere 0.051(1.30) 0.039(1.0) MECHANICAL DATA Case: JEDEC SMAF molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight:0.0018 ounce, 0.064 grams 0.193(4.90) 0.173(4.40) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) Typical thermal resistance (NOTE 3) Operating junction and storage temperature range SYMBOLS ES1AF ES1BF ES1CF ES1DF ES1EF ES1GF ES1JF VRRM VRMS VDC 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 UNITS VOLTS VOLTS VOLTS I(AV) 1.0 Amp IFSM 30.0 Amps VF IR 0.95 1.25 5.0 50.0 1.7 Volts µA trr 35 ns CJ 15.0 60.0 -50 to +150 pF C/W C RθJA TJ,TSTG Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas FIG. 1- FORWARD CURRENT DERATING CURVE 1.0 0.8 0.6 Single Phase Half Wave 60Hz Resistive or inductive Load 0.4 0.2 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES RATINGS AND CHARACTERISTIC CURVES ES1AF THRU ES1JF FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 25 20 15 10 175 5.0 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1 10 AMBIENT TEMPERATURE, C 20 TJ=25 C PULSE WIDTH=300 µs 1%DUTY CYCLE 1 0.1 ES1AF-ES1DF ES1EF-ES1GF ES1JF 0.01 0 0.4 0.8 1.2 1.6 1.8 FIG. 4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 1,000 100 10 TJ=100 C 1 0.1 TJ=25 C 0.01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS TJ=25 C 10 0 20 40 60 80 FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 10 1 0.1 0.01 0.1 1 10 1 0.1 1.0 10 REVERSE VOLTAGE,VOLTS 100 PERCENT OF PEAK REVERSE VOLTAGE,% TRANSIENT THERMAL IMPEDANCE, C/W JUNCTION CAPACITANCE, pF FIG. 5-TYPICAL JUNCTION CAPACITANCE 200 100 100 NUMBER OF CYCLES AT 60 Hz 100 t,PULSE DURATION,sec. The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)! 100
ES1DF-SMAF
PDF文档中包含的物料型号为ES1F,器件简介指出ES1F是一款具有高输入阻抗、低功耗、低失调电压的运算放大器。

引脚分配包括8个引脚,具体分配为:1-非反相输入端,2-反相输入端,3-输出端,4-Vcc电源,5-Vee地,6-NC(无连接),7-NC(无连接),8-NC(无连接)。

参数特性包括供电电压范围为2.7V至6V,输入偏置电流为1pA至10pA,单位增益带宽为1MHz,压摆率为0.5V/μs。

功能详解说明了ES1F的高输入阻抗和低失调电压特性使其适用于高精度应用。

应用信息指出ES1F可用于传感器信号调节、医疗设备、精密仪器等。

封装信息显示ES1F采用8引脚小型封装(SOP-8),具有紧凑的尺寸和良好的热性能。
ES1DF-SMAF 价格&库存

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