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MB110S

MB110S

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    MBS

  • 描述:

    桥式整流器/整流桥 IF=1A VR=100V VF=0.9V IR=0.1mA

  • 数据手册
  • 价格&库存
MB110S 数据手册
MB14S THRU MB120S Schottky Surface Mount Flat Bridge R ectifier Reverse Voltage - 40 to 200 Volts FEATURES MBS Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High temperature soldering guaranteed: 260 /10 seconds at 5 lbs., (2.3kg) tension Small size, simple installation High surge current capability + 0.028 0.7 0.010 0.25 ) Forward Current - 1.0 Amperes MECHANICAL DATA 0.067(1.7) Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Mounting Position: Any Weight:0.008 ounce, 0.22 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase,half wave 60Hz,resistive or inductive load,for current capacitive load, derate by 20%. MDD Catalog Number Symbol MB14S MB16S MB18S MB110S MB120S UNIT Maximum repetitive peak reverse voltage VRRM 40 60 80 100 200 V Maximum RMS voltage VRMS 28 42 56 70 140 V Maximum DC blocking voltage VDC 40 60 80 100 200 V Maximum average forward rectified current 0.2×0.2"(5.0×5.0mm)copper pad area IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forwad voltage at 1.0A Maximum DC reverse current TA = 25 ℃ at Rated DC blocking voltage TA = 100℃ Typical Junction Capacitance at 4.0V,1.0MHz Typical Thermal resistance (Note1) Operating junction temperature range Storage temperature range VF 0.55 0.3 10 IR CJ 0.70 110 0.85 0.90 V 0.2 5 0.1 2 mA pF RθJA RθJL 80 100 20 TJ –55 to +125 ℃ TSTG – 55 to +150 ℃ Note:1.Thermal resistance from junction to ambient and from junction to lead P.C.B.mounted on 0.2×0.2"(5.0×5.0mm)copper pad areas. ℃/ W RATINGS AND CHARACTERISTIC CURVES MB14S THRU MB110S Fig.2 Typical Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 75 50 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 10 3 T J =100°C 10 2 T J =75°C 10 1 T J =25°C 10 0 0 Case Temperature (°C) 40 20 60 100 80 Percent of Rated Peak Reverse Voltage(%) 500 10 1.0 MB14S MB16S/MB18S MB110S MB115S/MB120S 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 100 50 MB14S 20 MB16S-MB120S 10 1 0.1 100 10 Instaneous Forward Voltage (V) Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance MB14S-MB18S MB110S-MB120S 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 1 T J =25°C 200 1.8 50 00 Junction Capacitance ( pF) T J =25°C 20 10 100 Transient Thermal Impedance( °C /W) Peak Forward Surage Current (A) Instaneous Forward Current (A) Fig.4 Typical Junction Capacitance 1000 100 10 1 0.01 Number of Cycles at 60Hz The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)! 0.1 1 10 t, Pulse Duration(sec) 100
MB110S 价格&库存

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MB110S
  •  国内价格
  • 1+0.77289
  • 30+0.74339
  • 100+0.71390
  • 500+0.65490
  • 1000+0.62540
  • 2000+0.60770

库存:0