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ABS6

ABS6

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DBS-4P_5X4.4MM_SM

  • 描述:

    桥式整流器/整流桥 VRM=600V,IO=1A,IFSM=30A,VF=0.95V,IR=5uA

  • 数据手册
  • 价格&库存
ABS6 数据手册
ABS2 THRU ABS10 Voltage Range - 200 to 1000 V olts Current - 1.0 Ampere SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS Features ABS  Glass Passivated Chip Junction  Reverse Voltage - 200 to 1000 V  Forward Current - 1 A  High surge current capability  Designed for Surface Mount Application Mechanical Data Case : JEDEC ABS Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.0031 ounce, 0.098 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25°C ambient temperature unlss otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Average Rectified Output Current at Tc = 125 °C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per leg at 1A TA=25 Maximum DC reverse current TA=100 at rated DC blocking voltage TA=125 Typical thermal resistance (Note2) Typical Junction capacitance (Note1) Operating and storage temperature range VRRM VRMS VDC ABS2 ABS4 ABS6 ABS8 ABS10 MDD ABS2 MDD ABS4 MDD ABS6 MDD ABS8 MDD ABS10 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 UNITS V V V IF(AV) 1.0 A IFSM 35 A VF 1.1 V IR 5 50 100 uA 72 20 °C/W 13 pF -55 to +150 °C R R JA JC CJ TJ,TSTG NOTES:1.Measured at 1MHz and applied reverse voltage of 4 V D.C. 2.Mounted on glass epoxy PC board with 4×1.5"×1.5"(3.81×3.81 cm) copper pad. http://www.microdiode.com Rev:2024A2 Page :1 ABS2 THRU ABS10 Voltage Range - 200 to 1000 V olts Current - 1.0 Ampere Ratings And Characteristic Curves Fig.2 Typical Reverse Characteristics 1.2 1.0 0.8 0.6 0.4 0.2 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current(μ A) Average Rectified Output Current (A) Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 60 80 100 120 140 Fig.4 Typical Junction Capacitance T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle Junction Capacitance (pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 0.01 0.0 40 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 10 20 100 T J =25°C 10 1 0.5 1.0 1.5 2.0 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2

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ABS6
  •  国内价格
  • 20+0.14345
  • 100+0.13025
  • 500+0.12145
  • 1000+0.11265
  • 5000+0.10208
  • 10000+0.09768

库存:5000