GBJ2510

GBJ2510

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_30X4.6MM_TM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=25A,IFSM=350A,VF=1.0A,IR=10uA

  • 数据手册
  • 价格&库存
GBJ2510 数据手册
GBJ25005 THRU GBJ2510 Reverse Voltage - 50 to 1000 Volts Forward Current - 25.0 Amperes SILICON BRIDGE RECTIFIERS Features GBJ ? .134(3.4) ? .122(3.1)  Rating to 1000V prv  deal for printed circuit board .189(4.8) .173(4.4) .150(3.8) .134(3.4) 1.193(30.3) 1.169(29.7) .106(2.7) .096(2.3) Mechanical Data Case : JEDEC GBJ Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any + ? .134(3.4) ? .122(3.1) ~ ~ _ .165(4.2) .142(3.6) .708(18.0) .669(17.0)  Low forward voltage drop,high current capability .441(11.2) .425(10.8)  technique Plastic material has U/L lammability classification 94V-0 .198 MAX (5.1) .800(20.3) .776(19.7)  Reliable low cost construction utilizing molded plastic .094(2.4) .078(2.0) .043(1.1) .035(0.9) .114(2.9) .098(2.5) .031(0.8) .023(0.6) .402(10.2) .303(7.7).303(7.7) SPACING .386(9.8) .287(7.3).287(7.3) Maximum Ratings And Electrical Characteristics Dimensions in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward(with heatsink NOTE 2) Rectified current @T c =100°C(without heatsink) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Rating for Fusing(t
GBJ2510 价格&库存

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GBJ2510
  •  国内价格
  • 1+2.87040
  • 10+2.26560
  • 50+2.00640
  • 100+1.97630
  • 250+1.62240

库存:551