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GBJ2510

GBJ2510

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_30X4.6MM_TM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=25A,IFSM=350A,VF=1.0A,IR=10uA

  • 数据手册
  • 价格&库存
GBJ2510 数据手册
GBJ25005 THRU GBJ2510 SILICON BRIDGE RECTIFIERS Reverse Voltage - 50 to 1000 Volts GBJ ? .134(3.4) ? .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4) .094(2.4) .078(2.0) .043(1.1) .035(0.9) FEATURES .441(11.2) .425(10.8) ? .134(3.4) ? .122(3.1) Rating to 1000V PRV Ideal for printed circuit board Low forward voltage drop,high current capability Reliable low cost construction utilizing molded plastic technique results in inexpensive product .165(4.2) .142(3.6) .708(18.0) .669(17.0) + ~ ~ _ .198 MAX (5.1) .800(20.3) .776(19.7) 1.193(30.3) 1.169(29.7) .118(3.0)*45° .106(2.7) .096(2.3) Forward Current - 25.0 Amperes The plastic material has U/L flammability .114(2.9) .098(2.5) classification 94V-0 .031(0.8) .023(0.6) .402(10.2) .303(7.7).303(7.7) SPACING .386(9.8) .287(7.3).287(7.3) Dimensions in inches and (milimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum Average Forward (with heatsink Note 2) Rectified Current @ T C =100℃ (without heatsink) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage drop per birdge element at 12.5A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C It Rating for Fusing (t
GBJ2510 价格&库存

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GBJ2510
  •  国内价格
  • 10+1.89728
  • 50+1.74651
  • 200+1.62086
  • 600+1.49521
  • 1500+1.39469
  • 3000+1.33187

库存:741