GBJ35005 THRU GBJ3510
Reverse Voltage - 50 to 1000 Volts Forward Current - 35.0 Amperes
SILICON BRIDGE RECTIFIERS
Features
GBJ
? .134(3.4)
? .122(3.1)
Glass Passivated Chip Junction
Rating to 1000V PRV
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
1.193(30.3)
1.169(29.7)
Low forward voltage drop,high current capability
.106(2.7)
.096(2.3)
+
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
Mechanical Data
? .134(3.4)
? .122(3.1)
~ ~ _
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
classification 94V-0
.441(11.2)
.425(10.8)
Reliable low cost construction utilizing molded plastic
technique Plastic material has U/L lammability
.198 MAX
(5.1)
.800(20.3)
.776(19.7)
Ideal for printed circuit board
.114(2.9)
.098(2.5)
.031(0.8)
.023(0.6)
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
Case : JEDEC GBJ Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position : Any
Maximum Ratings And Electrical Characteristics
Dimensions in inches and (millimeters)
Ratings at 25°C ambient temperature unless otherwisespecified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Parameter
Marking Code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward(with heatsink Note 2)
Rectified current @T c =100°C(without heatsink)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t
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