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GBJ3510

GBJ3510

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_30X4.6MM_TM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=35A,IFSM=400A,VF=1.0A,IR=10uA

  • 数据手册
  • 价格&库存
GBJ3510 数据手册
GBJ35005 THRU GBJ3510 Reverse Voltage - 50 to 1000 Volts Forward Current - 35.0 Amperes SILICON BRIDGE RECTIFIERS Features GBJ ? .134(3.4) ? .122(3.1)  Glass Passivated Chip Junction  Rating to 1000V PRV .189(4.8) .173(4.4) .150(3.8) .134(3.4) 1.193(30.3) 1.169(29.7)  Low forward voltage drop,high current capability .106(2.7) .096(2.3) + .094(2.4) .078(2.0) .043(1.1) .035(0.9) Mechanical Data ? .134(3.4) ? .122(3.1) ~ ~ _ .165(4.2) .142(3.6) .708(18.0) .669(17.0) classification 94V-0 .441(11.2) .425(10.8)  Reliable low cost construction utilizing molded plastic  technique Plastic material has U/L lammability .198 MAX (5.1) .800(20.3) .776(19.7)  Ideal for printed circuit board .114(2.9) .098(2.5) .031(0.8) .023(0.6) .402(10.2) .303(7.7).303(7.7) SPACING .386(9.8) .287(7.3).287(7.3) Case : JEDEC GBJ Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Maximum Ratings And Electrical Characteristics Dimensions in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward(with heatsink Note 2) Rectified current @T c =100°C(without heatsink) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Rating for Fusing(t
GBJ3510 价格&库存

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GBJ3510
  •  国内价格
  • 1+1.99410
  • 10+1.90740

库存:345