GBJ5010

GBJ5010

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_30X4.6MM_TM

  • 描述:

    桥式整流器/整流桥 1kV 50A 1.1V@25A GBJ

  • 数据手册
  • 价格&库存
GBJ5010 数据手册
GBJ50005 THRU GBJ5010 Reverse Voltage - 50 to 1000 Volts Forward Current - 50.0 Amperes SILICON BRIDGE RECTIFIERS Features GBJ ? .134(3.4) ? .122(3.1)  Rating to 1000V PRV  Ideal for printed circuit board .189(4.8) .173(4.4) .150(3.8) .134(3.4) 1.193(30.3) 1.169(29.7) Case : JEDEC GBJ Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any .165(4.2) .142(3.6) .708(18.0) .669(17.0) .106(2.7) .096(2.3) Mechanical Data ~ ~ _ + ? .134(3.4) ? .122(3.1)  Low forward voltage drop,high current capability .441(11.2) .425(10.8)  technique Plastic material has U/L lammability classification 94V-0 .198 MAX (5.1) .800(20.3) .776(19.7)  Reliable low cost construction utilizing molded plastic .094(2.4) .078(2.0) .043(1.1) .035(0.9) .114(2.9) .098(2.5) .031(0.8) .023(0.6) .402(10.2) .303(7.7).303(7.7) SPACING .386(9.8) .287(7.3).287(7.3) Maximum Ratings And Electrical Characteristics Dimensions in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward(with heatsink NOTE 2) Rectified current @T c =100°C(without heatsink) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Rating for Fusing(t
GBJ5010 价格&库存

很抱歉,暂时无法提供与“GBJ5010”相匹配的价格&库存,您可以联系我们找货

免费人工找货
GBJ5010
  •  国内价格
  • 1+5.54680
  • 10+4.58640
  • 30+4.11600

库存:244