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RS1MD

RS1MD

  • 厂商:

    ST(先科)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    VR=1000V IF=1A 15pF Trr=500ns

  • 数据手册
  • 价格&库存
RS1MD 数据手册
RS1AD THRU RS1MD SURFACE MOUNT FAST RECOVERY RECTIFIERS Reverse Voltage - 50 to 1000 V Forward Current - 1 A Features • High current capability • High surge current capability • High reliability • Low reverse current • Fast switching for high efficiency Mechanical Data • Case: SMA (DO-214AC) molded plastic • Mounting position: Any • Lead: Lead formed for surface mount • Polarity: Color band denotes cathode end H C E T M E Absolute Maximum Ratings and Characteristics istics stics Ratings at 25°C ambient temperature unless otherwise erwise wise specified. Single phase, half wave, wave, 60H 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. ols RS1AD RS1BD Symbols S1BD R RS1DD RS1GD RS1JD RS1KD RS1MD Units Parameter Maximum Recurrent Peak Reverse everse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage tage age VRMS 35 70 140 280 420 560 700 V Maximum DC C Blocking Blockin Voltage VDC 50 100 200 400 600 800 1000 V Maximum imum mum Average Forward Current at TL = 90 0 °C IF(AV) 1 A Peak Forward Surge Current 8.3 ms Single Sing Half Load (JEDEC Sine-wave Superimposed on Rated L method) IFSM 30 A VF 1.3 V S Maximum Forward ward Volt Voltage at 1 A Maximum ximum DC R ximum Reverse Current ted DC Blocking Voltage at Rated at TA = 25°C at TA = 100°C Maximum Reverse Recovery Time 1) Typical Junction Capacitance Typical Thermal Resistance Operating and Storage Temperature Range 1) trr 2) 3) 5 IR μA 50 150 250 500 ns CJ 15 pF RșJA 50 °C/W Tj ,Tstg - 65 to + 150 ഒ Reverse recovery test conditions IF = 0.5 A, IR = 1 A, Irr = 0.25 A. 2) Measured at 1 MHz and applied reverse voltage of 4 V. 3) P.C.B. mounted with 0.2 X 0.2”(5 X 5 mm) copper pad areas. SEMTECH ELECTRONICS LTD. ® Dated : 09/12/2014 GD Rev:03 RS1AD THRU RS1MD H C E T M E S SEMTECH ELECTRONICS LTD. ® Dated : 09/12/2014 GD Rev:03
RS1MD 价格&库存

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RS1MD

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