LLDB3

LLDB3, LLDB4 Silicon Bidirectional Trigger Diodes LL-34 These diacs are intended for use in thyristor phase control, 3.5±0.1 1.45±0.05 circuits for lamp-dimming, universal-motor speed controls, and heat controls. 0.3±0.1 Glass Case Mini MELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation (Ta = 65 OC) Ptot 150 mW Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz) ITRM 2 A Tj, Tstg - 40 to + 125 Symbol Max. Unit RθJA 400 /W Operating Junction and Storage Temperature Range O C Thermal Resistance Ratings Parameter Thermal Resistance from Junction to Ambient 1) 1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. Characteristics at Ta = 25 OC Parameter Min. Max. 28 36 35 45 [|+VBO|-|-VBO|] - 3 V | V ± | 5 - V Output Voltage See diagram 2 VO 5 - V Breakover Current at C = 22 nF IBO - 50 µA Leakage Current at VB = 0.5 VBO max IB - 10 µA Rise Time See diagram 3 tr - 2 µs Breakover Voltage at C = 22 nF, see diagram 1 Symbol LLDB3 LLDB4 Breakover Voltage Symmetry at C = 22 nF, see diagram 1 Dynamic Breakover Voltage at I = [IBO to IF = 10 mA] 1/2 VBO Unit V ® Dated : 03/02/2023 Rev：01 LLDB3, LLDB4 Electrical Characteristics Curves 2/2 ® Dated : 03/02/2023 Rev：01