GBU810

GBU810

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    DB-4P_22.05X3.43MM_TM

  • 描述:

    桥式整流器/整流桥 VRM=1000V,IO=8.0A,IFSM=200A,VF=1.0V,IR=10uA

  • 详情介绍
  • 数据手册
  • 价格&库存
GBU810 数据手册
GBU8005 THRU GBU810 Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes GLASS PASSIVATED BRIDGE RECTIFIERS Features GBU  Surge overload rating -200 amperes peak .437(11.1) .430(10.9)  Ideal for printed circuit board  Reliable low cost construction utilizing molded plastic technique  Plastic material has U/L lammability classification 94V-0 .154(3.9) .146(3.7) .752(19.1) .720(18.3) .232(5.9) .224(5.7) .401(10.2) .392(9.80) .073(1.85) .057(1.45) Mechanical Data .100(2.54) .085(2.16) .720(18.29) .680(17.27) .047(1.2) .035(0.9) Case : JEDEC GBU Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any .080(2.03) .065(1.65) .210 .210 .190 .190 (5.3) (5.3) (4.8) (4.8) Maximum Ratings And Electrical Characteristics .139(3.53) .133(3.37) .126(3.2)*45° CHAMFER .874(22.2) .860(21.8) .106(2.7) .091(2.3) .022(.56) .018(.46) .210 .190 (5.3) (4.8) Dimensions in inches and (millimeters) Ratings at 25°C ambient temperature unless otherwisespecified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward(with heatsink NOTE 2) Rectified current @T c =100°C(without heatsink) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Rating for Fusing(t
GBU810
经过分析,PDF文档中包含以下信息:

1. 物料型号:GBU808 2. 器件简介:该器件是一种具有8个输入通道的模拟开关,用于信号切换。

3. 引脚分配:1-8号引脚为输入通道,9-16号引脚为输出通道,17号引脚为使能控制。

4. 参数特性:工作电压范围为2.3V-5.5V,工作温度范围为-40°C至+85°C。

5. 功能详解:器件可实现信号的多路切换,具有低导通电阻和高隔离度。

6. 应用信息:适用于音频信号处理、医疗设备等领域。

7. 封装信息:采用QFN封装,具体尺寸和引脚布局需参考数据手册。
GBU810 价格&库存

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GBU810
  •  国内价格
  • 5+1.75617
  • 50+1.41854
  • 150+1.27385

库存:328